Performance characteristics of a new high rate magnetron sputtering cathode = Performances d'une nouvelle cathode de pulvérisation à haute puissance à magnétronCLASS, W. H.Thin solid films. 1983, Vol 107, Num 4, pp 379-385, issn 0040-6090Article

Ion sputtering targets electrolytically prepared = Cibles de pulvérisation par ions préparées électrolytiquementJOKIC, T; GONCIC, B.Applied surface science. 1986, Vol 25, Num 1-2, pp 213-216, issn 0169-4332Article

Planarization by radio-frequency bias sputtering of aluminum as studied experimentally and by computer simulation = Aplanissement par pulvérisation haute fréquence de l'aluminium, étudié expérimentalement et par simulation sur ordinateurBADER, H. P; LARDON, M. A.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 6, pp 2167-2171, issn 0734-2101Article

Macroparticle contamination in cathodic arc coatings: generation, transport and controlBOXMAN, R. L; GOLDSMITH, S.Surface & coatings technology. 1992, Vol 52, Num 1, pp 39-50, issn 0257-8972Conference Paper

A model for atomic mixing and preferential sputtering effects in SIMS depth profilingKING, B. V; TSONG, I. S. T.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1984, Vol 2, Num 4, pp 1443-1447, issn 0734-2101Article

Composition of magnetron-sputtered aluminum alloy filmsLIU, D. R; NORIAN, K. H.Thin solid films. 1989, Vol 173, Num 1, pp L115-L118, issn 0040-6090Article

An investigation of the sputtering process in the microwave-coupled hollow cathode discharge = Une étude du processus de pulvérisation dans la décharge d'une cathode creuse couplée microondeVIOLANTE, N; SENOFONTE, O; MARCONI, A et al.Canadian journal of spectroscopy. 1988, Vol 33, Num 2, pp 49-55, issn 0045-5105Article

Effect of segregation on preferred sputtering of alloys = Influence de la ségrégation sur la pulvérisation sélective des alliagesITOH, N; MORITA, K.Radiation effects. 1984, Vol 80, Num 3-4, pp 163-182, issn 0033-7579Article

Eigenschaften von dünnen Molybdänschichten = Properties of thin Mo filmsRASCHKE, T; KAUFMANN, C; GRUÊNEWALD, W et al.Wissenschaftliche Zeitschrift der Technischen Universität Karl-Marx-Stadt. 1990, Vol 32, Num 5, pp 661-667, issn 0863-0615, 7 p.Article

Caractçrisation des dépôts d'aluminium sur magnésium obtenus par pulvérisation cathodique = Charactérisation of aluminium coatings on magnesium produced by cathode sputteringVENAULT, A; BECHET, B; SAURAT, M et al.Métaux. Corrosion industrie. 1984, Vol 60, Num 709, pp 281-290, issn 0026-1084Article

Amorphous Cu-Zr foils = Feuilles minces d'alliages Cu-Zr amorphesFELDER, R. J; HAUSER, J. J.Materials letters (General ed.). 1984, Vol 2, Num 3, pp 232-233, issn 0167-577XArticle

Oberflaechenveredelung durch Kathodenzerstaeubung = Surface coating by sputteringMUENZ, W.D.Gas, Wärme international. 1984, Vol 33, Num 6/7, pp 286-289, issn 0020-9384Article

Reactive high rate d.c. sputtering of oxides = Pulvérisation réactive à grande vitesse en courant continu des oxydesSCHERER, M; WIRZ, P.Thin solid films. 1984, Vol 119, Num 2, pp 203-209, issn 0040-6090Conference Paper

An empirical formula for angular dependence of sputtering yields = Formule empirique pour les rendements de pulvérisation en fonction de l'angle d'incidenceYAMAMURA, Y.Radiation effects. 1984, Vol 8, Num 1-2, pp 57-72, issn 0033-7579Article

PHYSICAL PROPERTIES OF SPUTTERED CHALCOGENIDE FILMS WITH A VARIABLE CONTENT OF FEBORNSTEIN A; LEWIN I; LEREAH Y et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 9; PP. 866-868; BIBL. 18 REF.Article

PREFERENTIAL SPUTTERING OF BINARY COMPOUNDS: A MODEL STUDYGARRISON BJ.1982; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1982; VOL. 114; NO 1; PP. 23-37; BIBL. 22 REF.Article

DEEP LEVELS STUDY IN FLOAT ZONE SI USED FOR FABRICATION OF CCD IMAGERSJASTRZEBSKI L; LAGOWSKI J.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 9; PP. 1957-1963; BIBL. 21 REF.Article

DC MAGNETRON SYSTEM FOR CATHODE SPUTTERING.KIROV KI; IVANOV NA; ATANASOVA ED et al.1976; VACUUM; G.B.; DA. 1976; VOL. 26; NO 6; PP. 237-241; BIBL. 16 REF.Article

MICROPROCESSOR AUTOMATED SPUTTERING.HUTT M.1976; SOLID STATE TECHNOL.; U.S.A.; DA. 1976; VOL. 19; NO 12; PP. 74-76Article

RF SPUTTERING OF YTTRIA ON INDIUM TIN OXIDE SUBSTRATESPANICKER MPR; ESSINGER WF.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 9; PP. 1943-1947; BIBL. 9 REF.Article

DEPTH RESOLUTION IN SPUTTER PROFILING: EVIDENCE AGAINST THE SEQUENTIAL LAYER SPUTTERING MODELWITTMAACK K; SCHULZ F.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 52; NO 2; PP. 259-270; BIBL. 21 REF.Article

THE FORMATION OF TA⁺ SECONDARY IONS AT OXYGEN-COVERED TA SURFACESOECHSNER H; SROUBEK Z.1983; SURFACE SCIENCE; ISSN 0039-6028; NLD; DA. 1983; VOL. 127; NO 1; PP. 10-20; BIBL. 19 REF.Article

RELATION OF THE PHOTON YIELD FROM A SPUTTERING SOURCE TO THE POPULATION DISTRIBUTION AND EXCITATION FUNCTIONSNOWDON KJ.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 42; NO 3-4; PP. 185-190; BIBL. 25 REF.Article

NOTE ON THE TIME CONSTANT FOR PREFERENTIAL BINARY SPUTTERINGCOLLINS R.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 43; NO 4-5; PP. 111-116; BIBL. 1 REF.Article

DIRECT EVIDENCE OF ELECTRON TUNNELING IN THE IONIZATION OF SPUTTERED ATOMSYU ML; LANG ND.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 2; PP. 127-130; BIBL. 13 REF.Article