On the analysis of complex thermoluminescent spectraDELUNAS, A; MAXIA, V; SPANO, G et al.Journal of luminescence. 1984, Vol 29, Num 2, pp 187-197, issn 0022-2313Article

Effets non réciproques dans des structures hétérogènes de semiconducteursBELYANTSEV, A. M; KOZLOV, V. A; MAZOV, L. S et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 655-660, issn 0015-3222Article

Diffusion des porteurs de déséquilibre dans le champ de centres profonds de capturePRIGODIN, V. N.ZETF. Pis′ma v redakciû. 1985, Vol 88, Num 3, pp 909-920, issn 0044-4510Article

Particularités de la caractéristique courant-tension lors d'une injection double dans les structures multicouches au silicium avec une base étroiteMNATSAKANOV, T. T; TUGUSHEVA, T. E.Radiotehnika i èlektronika. 1985, Vol 30, Num 1, pp 127-132, issn 0033-8494Article

Analysis of the decay of picosecond fluorescence in semiconductors. Criteria for the presumption of electroneutrality during the decay of an exponential electron-hole profileFELDBERG, S. W; EVENOR, M; HUPPERT, D et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1985, Vol 185, Num 2, pp 209-228, issn 0022-0728Article

High-field electron mobility and temperature in bulk semiconductorsARORA, V. K.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7297-7298, issn 0163-1829Article

Thermoluminescence governed by simultaneous thermal stimulation of electrons and holesCHEN, R; MATHUR, V. K; RHODES, J. F et al.Physica status solidi. B. Basic research. 1984, Vol 126, Num 1, pp 361-369, issn 0370-1972Article

Analytic transformation of the generation-recombination centres in the transmission-line equivalent-circuit model of a semiconductorKWOK, C. Y.Electronics Letters. 1983, Vol 19, Num 22, pp 947-949, issn 0013-5194Article

Recombinaison d'impuretés dans un semiconducteur à bandes étroites avec excitation de phonons localisésDMITRIEV, A. V.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 12, pp 2222-2224, issn 0015-3222Article

Understanding electron flow in conducting polymer films: injection, mobility, recombination and mesostructureSTONEHAM, A. M; RAMOS, M. M. D; ALMEIDA, A. M et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 42, pp 9877-9898, issn 0953-8984, 22 p.Article

Effet photomagnétique dans le tellure aux basses températuresVINOGRADOV, E. A; DEMISHEV, S. V; KOSICHKIN, YU. V et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 6, pp 1131-1133, issn 0015-3222Article

Kinetic fluctuations in an electron gas when the Auger effect is taken into accountRADUNOVIC, J. B.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 20, pp 3993-3999, issn 0022-3719Article

Surface recombination velocity. A useful concept?REES, G. J.Solid-state electronics. 1985, Vol 28, Num 5, pp 517-519, issn 0038-1101Article

Determination of trapped charge emission rates from nonexponential capacitance transients due to high trap densities in semiconductorsWANG, A. C; SAH, C. T.Journal of applied physics. 1984, Vol 55, Num 2, pp 565-570, issn 0021-8979Article

On the theory of crystal excitation by electric dischargesVOITIKOV, S. V; GRIBKOVSKII, V. P.Physica status solidi. B. Basic research. 1984, Vol 126, Num 1, pp 415-423, issn 0370-1972Article

Profile of trapped charge in silicon nitride films in MNOS structuresNABOK, A. V; NESTERENKO, B. A; SHIRSHOV, Y. M et al.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp 221-227, issn 0031-8965Article

The photoacoustic effect in semiconductorsSABLIKOV, V. A; SANDOMIRSKII, V. B.Physica status solidi. B. Basic research. 1983, Vol 120, Num 2, pp 471-480, issn 0370-1972Article

Drift mobility, electron trapping, and diffusion-limited kinetics in sulfur-sensitized AgBr microcrystalsDERI, R. J; SPOONHOWER, J. P.Journal of applied physics. 1985, Vol 57, Num 8, pp 2806-2811, issn 0021-8979Article

Theory of transient currents in dielectrics at a limited level of single injection. II: The case of weak injectionBAGINSKII, I. L; KOSTSOV, E. G.Physica status solidi. A. Applied research. 1985, Vol 88, Num 2, pp 637-646, issn 0031-8965Article

A theoretical explanation of the carrier lifetime as a function of the injection level in gold-doped siliconABBAS, C. C.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 10, pp 1428-1432, issn 0018-9383Article

On the determination of carrier mobilities and densities in semi-insulating GaAsHRIVNAK, L.Physica status solidi. A. Applied research. 1983, Vol 80, Num 1, pp 317-323, issn 0031-8965Article

A theoretical study of the effects of interacting grain boundaries on electron-beam-induced currentsLUKE, K. L; VON ROOS, O.Journal of applied physics. 1984, Vol 55, Num 8, pp 2962-2966, issn 0021-8979Article

Self-consistent semi-classical dynamic theory of non-radiative capture and emission statistics in defect semiconductorsMANDELIS, A.Physica status solidi. B. Basic research. 1984, Vol 122, Num 2, pp 687-701, issn 0370-1972Article

Enhancement of Auger recombination in semiconductors by electron-hole plasma interactionsTAKESHIMA, M.Physical review. B, Condensed matter. 1983, Vol 28, Num 4, pp 2039-2048, issn 0163-1829Article

Electron-trap generation by recombination of electrons and holes in SiO₂CHEN, I. C; HOLLAND, S; HU, C et al.Journal of applied physics. 1987, Vol 61, Num 9, pp 4544-4548, issn 0021-8979Article