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Review of analytical models for the study of highly doped regions of silicon devicesCUEVAS, A; BALBUENA, M. A.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 553-560, issn 0018-9383, 8 p.Article

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An assessment of approximate nonstationary charge transport models used for GaAs device modelingSANDBORN, P. A; RAO, A; BLAKEY, P. A et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1244-1253, issn 0018-9383, 10 p.Article

Fast and efficient multi-domain system simulation based on coupled heterogeneous model structuresROSU, Marius; KHER, Sameer; BELEY, Jean-Daniel et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7977, issn 0277-786X, isbn 978-0-8194-8539-7, 797722.1-797722.10, 2Conference Paper

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A design model for surface-termination optimization of off-state semiconductor devicesWADDELL, J. B; MIDDLETON, J; BOARD, K et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 943-953, issn 0018-9383, 11 p.Article

Analytical two-dimensional model for minority-carrier diffusion from small-geometry pn junctionSTROLLO, A. G. M; SPIRITO, P.Electronics Letters. 1989, Vol 25, Num 2, pp 130-131, issn 0013-5194, 2 p.Article

Nonpolar and Semipolar Group III Nitride-Based MaterialsSPECK, J. S; CHICHIBU, S. F.MRS bulletin. 2009, Vol 34, Num 5, issn 0883-7694, [49 p.]Serial Issue

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High-rare deposition of hydrogenated amorphous silicon films and devicesLUFT, W.Applied physics communications. 1988, Vol 8, Num 4, pp 239-298, issn 0277-9374Article

Generation of intense pulsed microwave from a high-density virtual cathode of a reflex triodeHANJO, H; NAKAGAWA, Y.Journal of applied physics. 1991, Vol 70, Num 2, pp 1004-1010, issn 0021-8979Article

Platinum silicide fusion bondingISMAIL, M. S; BOWER, R. W.Electronics Letters. 1991, Vol 27, Num 13, pp 1153-1155, issn 0013-5194Article

Mathematical modelling of radiation damage in semiconductor materialsBARASHENKOV, V. S; BORISOVA, M. G; GOLEMINOV, N. G et al.Soviet physics. Technical physics. 1990, Vol 35, Num 10, pp 1158-1162, issn 0038-5662Article

Si/SiGe heterojunction bipolar transistor with base doping highly exceeding emitter doping concentrationSCHREIBER, H.-U; BOSCH, B. G; KASPER, E et al.Electronics Letters. 1989, Vol 25, Num 3, pp 185-186, issn 0013-5194, 2 p.Article

Three-terminal delta-doped barrier switching device with S-shaped negative differential resistanceBAILLARGEON, J. N; CHENG, K. Y; LASKAR, J et al.Applied physics letters. 1989, Vol 55, Num 7, pp 663-665, issn 0003-6951, 3 p.Article

Improved radiation hardness of mos devices with ultrathin nitrided oxide gate dielectrics prepared by rapid thermal processingLO, G. Q; SHIH, D. K; TING, W. C et al.Electronics Letters. 1989, Vol 25, Num 13, pp 812-813, issn 0013-5194, 2 p.Article

Room-temperature operation of AIGaAs/GaAs resonant tunnelling structures grown by metalorganic vapour-phase epitaxySCHNELL, R. D; TEWS, H; NEUMANN, R et al.Electronics Letters. 1989, Vol 25, Num 13, pp 830-831, issn 0013-5194, 2 p.Article

Device dependence of charging effects from high-current ion implantationFELCH, S. B; BASRA, V. K; MCKENNA, C. M et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2338-2342, issn 0018-9383Article

Recent progress in power electronic devicesIKEDA, Y; YATSUO, T.Hitachi review. 1987, Vol 36, Num 1, pp 5-12, issn 0018-277XArticle

International Symposium on Semiconductor ManufactoringIEEE transactions on semiconductor manufacturing. 2007, Vol 20, Num 3, pp 195-277, issn 0894-6507, 82 p.Conference Paper

Integration of conducting polymer micro- and nano- actuators with semiconductor photonic devicesBERDICHEVSKY, Yevgeny; LO, Y.-H.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol2, 507-508Conference Paper

IEEE Lester Eastman conference on high performance devices (Newark DE, 6-8 August 2002)Leoni, Robert E.IEEE Lester Eastman conference on high performance devices. 2002, isbn 0-7803-7478-9, XIII, 508 p, isbn 0-7803-7478-9Conference Proceedings

A phenomenological model of switching in metal-thin insulator-semiconductor devices: a development of the analogy with the thyristorCHOI, W. K; DE LIMA, J. J; OWEN, A. E et al.Journal of applied physics. 1989, Vol 65, Num 5, pp 2102-2110, issn 0021-8979, 9 p.Article