Détermination des moments de l'approximation initiale lors d'une approximation linéaire de la distribution de l'impureté expulséeAMIRKHANOV, A. V; KAZINOV, V. A; FAJZRAKHMANOV, V. R et al.Mikroèlektronika (Moskva). 1984, Vol 13, Num 3, pp 228-231, issn 0544-1269Article

Recoil implantation yields and depth profiles. Analytical expressions for primary and cascade contributionsGRAS-MARTI, A.Physica status solidi. A. Applied research. 1983, Vol 76, Num 2, pp 621-627, issn 0031-8965Article

Distribution coefficients of impurities in metals : Periodic dependence on the atomic number of impurityDRAPALA, J; KUCHAT, L; BURKHANOV, G. S et al.Inorganic materials. 1998, Vol 34, Num 2, pp 114-127, issn 0020-1685Article

Phosphorus redistribution in P-doped polycrystalline silicon/tantalum silicide system during high temperature sinteringLURYI, S; LIFSHITZ, N.Journal of applied physics. 1983, Vol 54, Num 10, pp 6058-6060, issn 0021-8979Article

Calculation of projected range distributions of implanted ions in multilayer multi-element substratesMOULAVI-KAKHKI, M; ASHWORTH, D. G.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 6, pp 1135-1147, issn 0022-3719Article

Localisation d'une impureté diffusant dans des structures de semiconducteursKAMILOV, B. S.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 9, pp 1704-1706, issn 0015-3222Article

Simulation of three-dimensional ion implantation distributionsASHWORTH, D. G; MOULAVI-KAKHKI, M; OVEN, R et al.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 26, pp 5043-5054, issn 0022-3719Article

Effet du profil de la distribution des impuretés dans la couche de base d'une structure diode à semiconducteur sur l'écoulement du courant en régime balistique ou quasi balistiqueBANNOV, N. A; RYZHIJ, V. I.Mikroèlektronika (Moskva). 1984, Vol 13, Num 2, pp 148-151, issn 0544-1269Article

A comparison of two-dimensional ion-implantation profilesOVEN, P; ASHWORTH, D. G.Journal of physics. D, Applied physics (Print). 1987, Vol 20, Num 5, pp 642-646, issn 0022-3727Article

Exact description and data fitting of ion-implanted dopant profile evolution during annealingGHEZ, R; OEHRLEIN, G. S; SEDGWICK, T. O et al.Applied physics letters. 1984, Vol 45, Num 8, pp 881-883, issn 0003-6951Article

Range and spatial distribution of ion-implanted impurities in glassesDESHKOVSKAYA, A. A; BURENKOV, A. F; KOMAROV, F. F et al.Radiation effects. 1983, Vol 79, Num 1-4, pp 241-244, issn 0033-7579Article

Plasma stimulated impurity redistribution in siliconKOVESHNIKOV, S. V; YAKIMOV, E. B; YARYKIN, N. A et al.Physica status solidi. A. Applied research. 1989, Vol 111, Num 1, pp 81-88, issn 0031-8965, 8 p.Article

Plane wave topography on crystals with step-like impurity distributionsALTER, U; HÄRTWIG, J; KUBĚNA, J et al.Czechoslovak journal of physics. 1985, Vol 35, Num 2, pp 158-167, issn 0011-4626Article

Analyse de la distribution inhomogène des impuretés dans une couche de semiconducteurs au voisinage de la surfaceROMANOV, O. V; KOLODYAZNYJ, O. A; SULTANMAGOMEDOV, S. N et al.Mikroèlektronika (Moskva). 1984, Vol 13, Num 3, pp 232-238, issn 0544-1269Article

Distribution des impuretés dans l'épaisseur d'une lame, lors de leur augmentation à partir de la phase gazeuse, obtenue par simulation sur ordinateurALEKSANDROV, L. N; KOGAN, A. N; D'YAKONOVA, V. I et al.Inženerno-fizičeskij žurnal. 1983, Vol 45, Num 2, pp 320-325, issn 0021-0285Article

Determination of the Ni⁺-F^- distance for square-planar and linear centers in LiF: Ni⁺ and NaF:Ni⁺BARRIUSO, M. T; MORENO, M.Solid state communications. 1984, Vol 51, Num 5, pp 335-338, issn 0038-1098Article

DETERMINATION OF THE SEMICONDUCTOR DOPING PROFILE RIGHT UP TO ITS SURFACE USING THE MIS CAPACITOR.ZIEGLER K; KLAUSMANN E; KAR S et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 2; PP. 189-198; BIBL. 22 REF.Article

THE ORIGIN OF NON-GAUSSIAN PROFILES IN PHOSPHORUS-IMPLANTED SILICON.BLOOD P; DEARNALEY G; WILKINS MA et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 12; PP. 5123-5128; BIBL. 18 REF.Article

INCORPORATION DE PBBR₂ DANS LE RESEAU CRISTALLIN DE KBR PAR FUSION DE ZONEKIRKOVA E.1972; GOD. SOFIJSK. UNIV., KHIM. FAK.; BALG.; DA. 1972; VOL. 64; PP. 323-329; ABS. ANGL.; BIBL. 26 REF.Serial Issue

PHASE EQUILIBRIA AND POINT DEFECTS IN ICE.BILGRAM JH.1974; PHYS. CONDENS. MATTER; GERM.; DA. 1974; VOL. 18; NO 4; PP. 263-273; BIBL. 15 REF.Article

THE DEPTH DISTRIBUTION OF PHOSPHORUS IONS IMPLANTED INTO SILICON CRYSTALS.BLOOD P; DEARNALEY G; WILKINS MA et al.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 21; NO 4; PP. 245-251; BIBL. 10 REF.Article

MESURES EXPERIMENTALES DE LA PENETRATION DES PROTONS DANS LE SILICIUM.CASTAING C; BARUCH P; PICARD C et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 61-68; ABS. ANGL.; BIBL. 11 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

CONTROLE DE L'HOMOGENEITE DE DISTRIBUTION DE L'IMPURETE ALLIEE DANS LES SEMI-CONDUCTEURSMEJER AA; FISTUL VI; YUR'EVA IM et al.1974; ZAVODSK. LAB.; S.S.S.R.; DA. 1974; VOL. 40; NO 12; PP. 1505-1508; BIBL. 3 REF.Article

DEPTH DISTRIBUTION OF GALLIUM IONS IMPLANTED INTO SILICON CRYSTALS.DEARNALEY G; GARD GA; TEMPLE W et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 1; PP. 17-18; BIBL. 12 REF.Article

MODELES MATHEMATIQUES DE L'IMPLANTATION IONIQUE.COMBASSON JL.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 321-328; BIBL. 15 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper