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kw.\*:("Effet Schottky")

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Results 1 to 25 of 235

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Schottky-enabled photoemission in a rf accelerator photoinjector: Possible generation of ultralow transverse thermal-emittance electron beamYUSOF, Zikri M; CONDE, Manoel E; WEI GAI et al.Physical review letters. 2004, Vol 93, Num 11, pp 114801.1-114801.4, issn 0031-9007Article

A 250 GHz planar low noise Schottky receiverALI-AHMAD, W. Y; BISHOP, W. L; CROWE, T. W et al.International journal of infrared and millimeter waves. 1993, Vol 14, Num 4, pp 737-748, issn 0195-9271Article

SCHOTTKY EFFECT IN THE PR3TE4-PR2TE3 SYSTEM.MITAROV RG; TIKHONOV VV; VASILEV LN et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 2; PP. 457-467; ABS. RUSSE; BIBL. 23 REF.Article

Silicon-nanowire transistors with intruded nickel-silicide contactsWEBER, Walter M; GEELHAAR, Lutz; KREUPL, Franz et al.Nano letters (Print). 2006, Vol 6, Num 12, pp 2660-2666, issn 1530-6984, 7 p.Article

Behaviour of Schottky layer quantum well under transversal electric fieldBUZANEVA, E. V; LEVANDOVSKY, V. V; LEVANDOVSKY, V. G et al.Applied surface science. 1993, Vol 72, Num 1, pp 15-17, issn 0169-4332Article

D.c. electrical measurements and temperature dependence of the Schottky-barrier capacitance on thin films of β-MgPc dispersed in polycarbonateRIAD, A. S; EL-SHABASY, M; ABDEL-LATIF, R. M et al.Thin solid films. 1993, Vol 235, Num 1-2, pp 222-227, issn 0040-6090Article

Impedance spectroscopic study of Si/HF-electrolyte system during Si dissolutionPATEL, B. K; SAHU, S. N.Applied physics. A, Materials science & processing (Print). 2000, Vol 71, Num 6, pp 695-700, issn 0947-8396Article

Ion generation in liquid crystals under electric fieldNAEMURA, Shohei; SAWADA, Atsushi.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 2000, Vol 346, pp 155-168, issn 1058-725XConference Paper

ETUDE THEORIQUE D'UNE COUCHE DE POTENTIEL VOISINE D'UNE ELECTRODE AVEC CONSIDERATION DE L'IONISATION DE SURFACE ET DE L'EFFET DE SHOTTKYPOTAPOV AV; TSVETKOVA LE.1975; INZHENER.-FIZ. ZH., BELORUS. S.S.R.; S.S.S.R.; DA. 1975; VOL. 28; NO 3; PP. 482-489; ABS. ANGL.; BIBL. 12 REF.Article

INJECTION CONTROLLED CONDUCTIONHILL RM.1973; THIN SOLID FILMS; NETHERL.; DA. 1973; VOL. 15; NO 3; PP. 369-391; BIBL. 28 REF.Serial Issue

THE SCHOTTKY EFFECT IN PUNCH-THROUGH DIODES.VAN DE ROER TG.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 9; PP. 3835-3837; BIBL. 8 REF.Article

Junction effects in phthalocyanine thin film solar cellsSIEBENTRITT, S; GUÊNSTER, S; MEISSNER, D et al.Synthetic metals. 1991, Vol 41, Num 3, pp 1173-1176, issn 0379-6779, 4 p.Conference Paper

Genus-dependent divergences in bosonic string perturbation theoryDAVIS, S.Classical and quantum gravity (Print). 1990, Vol 7, Num 10, pp 1887-1893, issn 0264-9381Article

Local electric fields in silicided shallow junctionsCZERWINSKI, A; SIMOEN, E; POYAI, A et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 9, pp G578-G582, issn 0013-4651Article

Local electrical properties of vanadyl phthalocyanine multilayers studied by atomic force microscopyQIYING CHEN; TADA, H; YAMADA, H et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1999, Vol 337, pp 505-509, issn 1058-725XConference Paper

Analysis of current-voltage characteristics of organic electroluminescent devices on the basis of Schottky emission mechanismMATSUMURA, M; JINDE, Y; AKAI, T et al.Japanese journal of applied physics. 1996, Vol 35, Num 11, issn 0021-4922, 5735 -5739, 1Article

Modeling the extended Schottky cathode by a boundary element methodHARTMAN, R. L; HINRICHS, C. H.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 6, pp 1180-1186, issn 0018-9383Article

The effects of contact type on the properties of semiinsulating GaAs photodetectorsRIESZ, F; SERENYI, M; NEMETH-SALLAY, M et al.Physica status solidi. A. Applied research. 1994, Vol 143, Num 1, pp K53-K56, issn 0031-8965Article

Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodesLIN, Yow-Jon; LIN, Jian-Huang.Applied surface science. 2014, Vol 311, pp 224-229, issn 0169-4332, 6 p.Article

Réalisation et caractérisation de composants à base de silicium pour la détection dans l'infrarouge moyen et lointain = Realization and characterization of silicon devices for long and middle infrared detectionRenard, Christophe; Pfister, J.-C.1995, 210 p.Thesis

Effect of electron-beam deposition rate on the electrical properties of Ti/ and Pt/n-GaAs contactsAURET, F. D; BARNARD, W. O; MEYER, W. E et al.Thin solid films. 1993, Vol 235, Num 1-2, pp 163-168, issn 0040-6090Article

Development of high spatial resolution Auger microscope as applied to semiconductor analysisYAMADA, T; KUDO, M; ANDO, Y et al.Applied surface science. 1996, Vol 100-01, pp 287-291, issn 0169-4332Conference Paper

Effect of substrate preconditioning on charge transport at the phthalocyanine-conducting polymer film interfaceRADHAKRISHNAN, S; UNDE, S.Thin solid films. 1999, Vol 347, Num 1-2, pp 229-232, issn 0040-6090Article

About the I-V characteristic of metal-porous silicon diodesGIEBEL, G; PAVESI, L.Physica status solidi. A. Applied research. 1995, Vol 151, Num 2, pp 355-361, issn 0031-8965Article

Charge Transport in Interpenetrating Networks of Semiconducting and Metallic Carbon NanotubesTOPINKA, Mark A; ROWELL, Michael W; GOLDHABER-GORDON, David et al.Nano letters (Print). 2009, Vol 9, Num 5, pp 1866-1871, issn 1530-6984, 6 p.Article

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