MEASUREMENT OF RADIATIVE RECOMBINATION COEFFICIENT AND CARRIER LEAKAGE IN 1.3 MU M INGAASP LASERS WITH LIGHTLY DOPED ACTIVE LAYERSSU CB; SCHLAFER J; MANNING J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1108-1110; BIBL. 13 REF.Article

BAND-TO-BAND AUGER RECOMBINATION IN INGAASP LASERSSUGIMURA A.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 21-23; BIBL. 30 REF.Article

INFLUENCE OF PRESSURE ON TEMPERATURE SENSITIVITY GA_XIN_1-XAS_YP_1-Y LASERSADAMS AR; PATEL D; GREENE PD et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 21; PP. 919-920; BIBL. 5 REF.Article

INTERBAND AUGER RECOMBINATION IN INGAASPCHIU LC; CHEN PC; YARIV A et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 6; PP. 938-941; BIBL. 20 REF.Article

SHUNT CURRENT AND EXCESS TEMPERATURE SENSITIVITY OF I_TH AND ETA _EX IN 1.3 MU M IN GAASP DH LASERSNAMIZAKI H; HIRANO R; HIGUCHI H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 703-705; BIBL. 6 REF.Article

ANOMALOUS EFFECT OF CARRIERS ON DIELECTRIC CONSTANT OF (IN, GA) (AS, P) LASERS OPERATING AT 1.3 MU M WAVELENGTHTURLEY SEH.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 590-592; BIBL. 6 REF.Article

AUGER RECOMBINATION RATE IN INGAASP LASERSBURT MG.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 806-807; BIBL. 12 REF.Article

GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

HIGH QUANTUM EFFICIENCY INGAASP/INP LASERSTAMARI N; ORON M; MILLER BI et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1025-1027; BIBL. 13 REF.Article

INTERNAL LASS OF INGAASP/INP BURIED CRESCENT (LAMBDA =1.3MU M) LASERHIGUCHI H; NAMIZAK; OOMURA E et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 320-321; BIBL. 10 REF.Article

EVIDENCE FOR AUGER AND FREE-CARRIER LOSSES IN GAINASP/INP LASERS: SPECTROSCOPY OF A SHORT WAVELENGTH EMISSIONMOZAER A; ROMANEK KM; SCHMID W et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 10; PP. 964-966; BIBL. 37 REF.Article

DECAPAGE IONIQUE DES HETEROJONCTIONS INP-INGAASPZARGAR'YANTS MN; KRAPUKHIN VV; KRYKANOV IA et al.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 10; PP. 2102-2104; BIBL. 9 REF.Article

A GROOVE GAINASP LASER ON SEMI-INSULATING INP USING A LATERALLY DIFFUSED JUNCTIONYU KL; KOREN U; CHEN TR et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 5; PP. 817-819; BIBL. 6 REF.Article

INTEGRATED ARRAYS OF 1.3-MU M BURIED-CRESCENT LASERSTEMKIN H; LOGAN RA; VAN DER ZIEL JP et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 934-936; BIBL. 10 REF.Article

GAIN SPECTRA OF QUATERNARY SEMICONDUCTORSOSINSKI M; ADAMS MJ.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 229-236; BIBL. 56 REF.Article

HIGH-EFFICIENCY SHORT-CAVITY INGAASP LASER WITH ONE HIGH-REFLECTIVITY MIRRORLEE TP; BURRUS CA; LIU PL et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 805-806; BIBL. 3 REF.Article

VARIATION THERMIQUE DU SEUIL DE GENERATION DES HETEROSTRUCTURES DOUBLES INGAASP-GAAS (LAMBDA GEN=729 NM, T >OU= 300 K, J_SEUIL >OU= 5 X 10³ A/CM²)AREENT'EV IN; VAVILOVA LS; GARBUZOV DZ et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 5; PP. 843-846; BIBL. 15 REF.Article

LEO BANDWIDTH IMPROVEMENT BY BIPOLAR PULSINGDAWSON RW.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 7; PP. 697-699; BIBL. 5 REF.Article

LATERAL CONFINEMENT INGAASP SUPERLUMINESCENT DIODE AT 1.3 MU MKAMINOW IP; EISENSTEIN G; STULZ LW et al.1983; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1983; VOL. 19; NO 1; PP. 78-82; BIBL. 11 REF.Article

BE-IMPLANTED GAINASP/INP DOUBLE HETEROJUNCTION LASER DIODESDONNELLY JP; WALPOLE JN; LIAU ZL et al.1983; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1983; VOL. 19; NO 2; PP. 175-179; BIBL. 19 REF.Article

INGAASP PLANAR BURIED HETEROSTRUCTURE LASER DIODE (PBH-LD) WITH VERY LOW THRESHOLD CURRENTMITO I; KITAMURA M; KAEDE K et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 1; PP. 2-3; BIBL. 4 REF.Article

OBSERVATION OF TRANSIENT SPECTRA AND MODE PARTITION NOISE OF INJECTION LASERSPAO LO LIU; LEE TP; BURRUS CA et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 21; PP. 904-905; BIBL. 9 REF.Article

SHORT-CAVITY INGAASP INJECTION LASERS: DEPENDENCE OF MODE SPECTRA AND SINGLE-LONGITUDINAL-MODE POWER ON CAVITY LENGTHLEE TP; BURRUS CA; COPELAND JA et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 7; PP. 1101-1113; BIBL. 23 REF.Article

TRANSIENT FREQUENCY AND TEMPERATURE VARIATION OF GAINPAS LASERS UNDER PULSED EXCITATIONITO R; SUYAMA M; OGASAWARA N et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 214-216; BIBL. 8 REF.Article