kw.\*:("GROUP VB ELEMENT")
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DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS.KASTNER M; FRITZSCHE H.1978; PHILOS. MAG., B; G.B.; DA. 1978; VOL. 37; NO 2; PP. 199-215; BIBL. 21 REF.Article
ETUDE DE L'EFFET ELECTROMECANIQUE LORS DU MACLAGE DES CRISTAUX DE BISMUTH DANS L'INTERVALLE DE TEMPERATURES 77-530KBASHMAKOV VI; SAVENKO VS.1980; IZV. VYSS. UCEBN. ZAVED., FIZ.; ISSN 0021-3411; SUN; DA. 1980; VOL. 23; NO 7; PP. 29-33; BIBL. 19 REF.Article
THE STUDY OF EVAPORATED ANTIMONY CLEAVAGE FACES BY SURFACE DECORATIONLAMPERT B; REICHELT K.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 2; PP. 213-222; BIBL. 9 REF.Article
THE STRUCTURE OF N2 AT 49 KBAR AND 299 KCROMER DT; MILLS RL; SCHIFERL D et al.1981; ACTA CRYSTALLOGR., B; ISSN 0567-7408; DNK; DA. 1981; VOL. 37; NO 1; PP. 8-11; BIBL. 17 REF.Article
Chimie hydrothermale de l'obtention de certains composés minérauxPOPOLITOV, V. I; PLAKHOV, G. F.Žurnal prikladnoj himii. 1983, Vol 56, Num 9, pp 1941-1948, issn 0044-4618Article
Elements of group 5SOWERBY, D. B.Coordination chemistry reviews. 1990, Vol 103, pp 1-161, issn 0010-8545, 161 p.Article
Structure and bonding in cubic IV-VI crystals. II: Instability of the TO(Γ) mode ― Unified universal-parameter treatment of the group-V semimetals and cubic IV-VI semiconductorsENDERS, P.Physica status solidi. B. Basic research. 1984, Vol 121, Num 1, pp 39-46, issn 0370-1972Article
The relation of inner compressibilities to the pressure dependence of atomic position parameters in simple crystal structuresCOUSINS, C. S. G.Acta crystallographica. Section A, Crystal physics, diffraction, theoretical and general crystallography. 1984, Vol 40, Num 5, pp 498-502, issn 0567-7394Article
Nonlinear Thomas-Fermi screening of donors in siliconGAJANANAN, V; PALANIYANDI, E.Physical review. B, Condensed matter. 1985, Vol 31, Num 6, pp 4019-4020, issn 0163-1829Article
Interaction dans les systèmes Bi2S3-SmS et Bi2S3-Sm2S3SADYGOV, F. M; ALIEV, I. I; ALIEV, O. M et al.Žurnal neorganičeskoj himii. 1989, Vol 34, Num 4, issn 0044-457X, 1071Article
Rhombohedral phase stability of the group-VA elementsCHANG, K. J; COHEN, M. L.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 7371-7374, issn 0163-1829Article
A simple model for impurity photoabsorption in siliconBAMBAKIDIS, G.Journal of applied physics. 1984, Vol 55, Num 12, pp 4373-4375, issn 0021-8979Article
Liquidus measurement of In-rich In-Sb solutions in the 300-525°C rangeDEWINTER, J. C; POLLACK, M. A.Journal of applied physics. 1988, Vol 63, Num 9, pp 4774-4775, issn 0021-8979Article
Propriétés et structure des verres de sulfure d'arsenic à base de As2S3 avec additions de divers éléments pGODOVIKOV, A. A; KURYAEVA, R. G.Fizika i himiâ stekla. 1983, Vol 9, Num 4, pp 502-509, issn 0132-6651Article
GENERATION OF METAL CLUSTERS CONTAINING FROM 2 TO 500 ATOMS = GENERATION D'AMAS METALLIQUES CONTENANT ENTRE 2 ET 500 ATOMESSATTLER K; MUEHLBACH J; RECKNAGEL E et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 45; NO 10; PP. 821-824; BIBL. 13 REF.Article
CRISTALLISATION DIRIGEE DU BISMUTH. IV. DISTRIBUTION DES IMPURETES FACILEMENT OXYDABLESARTYUKHIN PI; MITYAKIN YU L; SHAVINSKIJ BM et al.1980; IZV. SIB. OTD. AKAD. NAUK SSSR, SER. HIM. NAUK; ISSN 0002-3426; SUN; DA. 1980; NO 14; PP. 40-44; ABS. ENG; BIBL. 12 REF.Article
PULSED LASER HEATING CALCULATIONS INCORPORATING VAPOURIZATIONJAIN AK; KULKARNI VN; SOOD DK et al.1981; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1981; VOL. 25; NO 2; PP. 127-133; BIBL. 25 REF.Article
STRUCTURE DETERMINATIONS ON SB UP TO 85 X 102 MPA = DETERMINATIONS DE STRUCTURE SUR SB JUSQU'A 85 X 102 MPASCHIFERL D; CROMER DT; JAMIESON JC et al.1981; ACTA CRYSTALLOGR., B; ISSN 0567-7408; DNK; DA. 1981; VOL. 37; PART. 4; PP. 807-810; BIBL. 30 REF.Article
VARIATION DU POTENTIEL D'INTERACTION PAR PAIRE AU COURS DU CHAUFFAGE DES PHASES FONDUES DE GERMANIUM, ANTIMOINE ET BISMUTHGLAZOV VM; TIMOSHENKO VI; AJVAZOV AA et al.1981; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1981; VOL. 55; NO 8; PP. 2101-2105; BIBL. 25 REF.Article
A RHEED STUDY OF ANTINOMY GROWTH ON ANTIMOMY (111)STIDDARD MHB.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 3; PP. 394-396; BIBL. 5 REF.Article
CONTRIBUTIONS TO THE SURFACE PREPARATION OF SEMICONDUCTOR MATERIALS OF LOW HARDNESSENGEL A.1980; KRIST. TECH.; ISSN 0023-4753; DDR; DA. 1980; VOL. 15; NO 12; PP. 1439-1446; ABS. GER; BIBL. 35 REF.Article
NUCLEAR QUADRUPOLE RESONANCE STUDIES OF AMORPHOUS, ORTHORHOMBIC, AND RHOMBOHEDRAL ARSENICJELLISON GE JR; PETERSEN GL; TAYLOR PC et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 8; PP. 3903-3916; BIBL. 61 REF.Article
IRRADIATION ELECTRONIQUE DE L'ANTIMOINE: MONTEE DES DISLOCATIONS MIXTES ET DETERMINATION DE LA NATURE DES BOUCLES DE DEFAUTS PONCTUELSLEGROS DE MAUDUIT O; ALCOUFFE G; REYNAUD F et al.1980; RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1980; VOL. 53; NO 1-2; PP. 55-65; BIBL. 34 REF.Article
ATOMIC QUADRUPOLE MOMENTS: NP2(N+1)S EXCITED-STATE CONFIGURATION OF N,P,AS, AND SBSEN KD.1979; PHYS. REV. A; ISSN 0556-2791; USA; DA. 1979; VOL. 20; NO 6; PP. 2276-2277; BIBL. 9 REF.Article
ENERGY LOSS AND STRAGGLING OF PROTONS AND HELIUM IONS TRAVERSING SOME THIN SOLID FOILSECKARDT JC.1978; PHYS. REV., A; USA; DA. 1978; VOL. 18; NO 2; PP. 426-433; BIBL. 55 REF.Article