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ELECTROLUMINESCENCE DANS UNE HETEROJONCTION ZNTE-ZNSELE FLOCH G; ARNOULD H.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 8; PP. 941-944; ABS. ANGL.; BIBL. 14 REF.Serial Issue

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PHENOMENA AT HETEROJUNCTIONSVAN RUYVEN LJ.1972; ANNU. REV. MATER. SCI.; U.S.A.; DA. 1972; VOL. 2; PP. 501-528; BIBL. 1 P. 1/2Serial Issue

THE GRADED-GAP AL_XGA_1-XAS-GAAS HETEROJUNCTIONWOMAC JF; REDIKER RH.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 10; PP. 4129-4133; BIBL. 20 REF.Serial Issue

GREEN ELECTROLUMINESCENCE FROM CDS-CUGAS₂ HETERODIODESWAGNER S; SHAY JL; TELL B et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 351-353; BIBL. 6 REF.Serial Issue

ELECTROLUMINESCENCE PAR INJECTION DANS L'HETEROJONCTION ZNSE-SNO₂IKEDA K; USHIDA K; KHAMAKAVA E et al.1973; IZVEST. AKAD. NAUK S.S.S.R., SER. FIZ.; S.S.S.R.; DA. 1973; VOL. 37; NO 2; PP. 423-425; BIBL. 6 REF.Serial Issue

ELECTRONIC PROPERTIES OF GRADED HETEROJUNCTIONSROTH LM; BENNETT AJ.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 6; PP. 2238-2245; BIBL. 10 REF.Serial Issue

DIFFUSE STRAHLUNG AUS (GAAL) AS/GAAS-HETERODIODEN VOM FABRY-PEROT-TYP = EMISSION DIFFUSE PAR DES HETERODIODES (GAAL) AS/GAAS DU TYPE FABRY-PEROTZEHE A; JACOBS B; ALBRECHT R et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 12; PP. 1365-1374; ABS. ANGL.; BIBL. 10 REF.Serial Issue

DETECTEURS DE PETITS SIGNAUX LUMINEUX A HETEROJONCTION CU₂SE-CDSEKOMASHCHENKO VN; FEDORUS GA.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 9; PP. 25-29; BIBL. 4 REF.Serial Issue

Polar optical interface phonons and Fröhlich interaction in double heterostructuresLASSNIG, R.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7132-7137, issn 0163-1829Article

Fast pulsing of single heterojunction laser diodesHULL, D. R; NORTON, S. J.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 1, pp 19-28, issn 0022-3727Article

Hot-electron memory effect in double-leyered heterostructuresLURYI, S; KASTALSKY, A; GOSSARD, A. C et al.Applied physics letters. 1984, Vol 45, Num 12, pp 1294-1296, issn 0003-6951Article

Space-charge waves in multilayered heterostructuresDATTA, S; GUNSHOR, R. L.Journal of applied physics. 1983, Vol 54, Num 8, pp 4453-4456, issn 0021-8979Article

Some comments on Nussbaum's heterojunction lineup theoryLEE, R. J.IEEE electron device letters. 1985, Vol 6, Num 3, pp 130-131, issn 0741-3106Article

RAPID DEGRADATION IN DOUBLE-HETEROSTRUCTURE LASERS. II. SEMIQUANTITATIVE ANALYSES ON THE PROPAGATION OF DARK LINE DEFECTS.NANNICHI Y; MATSUI J; ISHIDA K et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 10; PP. 1561-1568; BIBL. 24 REF.Article

CHARACTERISTICS OF THE JUNCTION-STRIPE-GEOMETRY GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS.NAMIZAKI H; KAN H; ISHII M et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 10; PP. 1618-1623; BIBL. 7 REF.Article

PHOTON RECYCLING IN SEMICONDUCTOR LASERS.STERN F; WOODALL JM.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3904-3906; BIBL. 10 REF.Article

COSTRUZIONE E CARATTERIZZAZIONE DI DISPOSITIVI LASER A SEMICONDUTTORE A DOPPIA ETEROGIUNZIONE. = CONSTRUCTION ET CARACTERISTIQUES DES DISPOSITIFS LASER A SEMICONDUCTEUR A DOUBLE HETEROJONCTIONDONZELLI G; FLORES C; RANDONE G et al.1976; ALTA FREQ.; ITAL.; DA. 1976; VOL. 45; NO 5; PP. 279-288; BIBL. 16 REF.Article

LOW-THRESHOLD LPE IN_1-X'GA_X'P_1-Z'/IN_1-XGA_XP_1-ZAS_Z/IN_1-X' GA_X'P_1-Z'AS_Z' YELLOW DOUBLE-HETEROJUNCTION LASER DIODES (J<10⁴ A/CM², LAMBDA EQUIV. A 5850 A, 77^OK).HITCHENS WR; HOLONYAK N JR; WRIGHT PD et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 4; PP. 245-247; BIBL. 14 REF.Article

VERY LOW-THRESHOLD DOUBLE-HETEROJUNCTION AL_XGA_1-X AS INJECTION LASERS.ETTENBERG M.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 12; PP. 652-654; BIBL. 9 REF.Article

GAAS-AL_XGA_1-XAS INJECTION LASERS WITH DISTRIBUTOR BRAGG REFLECTORS.REIHART FK; LOGAN RA; SHANK CV et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 1; PP. 45-48; BIBL. 16 REF.Article

GROWTH OF DARK LINES FROM CRYSTAL DEFECTS IN GAAS-GAALAS DOUBLE HETEROSTRUCTURE CRYSTALS.ITO R; NAKASHIMA H; NAKADA O et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 8; PP. 1321-1322; BIBL. 8 REF.Article

OXYGEN-IMPLANTED DOUBLE-HETEROJUNCTION GAAS/GAALAS INJECTION LASERS.BLUM JM; GRODDY JC; MCMULLIN PG et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 413-418; BIBL. 14 REF.Article

CONTINUOUS OPERATION OVER 2500 H OF DOUBLE HETEROSTRUCTURE LASER DIODES WITH OUTPUT POWERS MORE THAN 80 MW.NAKADA O; CHINONE N; NAKAMURA S et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 9; PP. 1485-1486; BIBL. 11 REF.Article