Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation techniqueHAIGUI YANG; DONG WANG; NAKASHIMA, Hiroshi et al.Thin solid films. 2012, Vol 520, Num 8, pp 3283-3287, issn 0040-6090, 5 p.Conference Paper

Hole mobility in organic single crystal field effect transistorsGOLDMANN, C; KRELLNER, C; PERNSTICH, K. P et al.DRC : Device research conference. 2004, isbn 0-7803-8284-6, 1Vol, p. 229Conference Paper

Highly efficient blue organic light-emitting devices using oligo(phenylenevinylene) dimers as an emitting layerGANG CHENG; FENG HE; YI ZHAO et al.Semiconductor science and technology. 2004, Vol 19, Num 7, pp L78-L80, issn 0268-1242Article

Trap-controlled hopping in doubly doped organic photoreceptor layersVERES, J; JUHASZ, C.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1997, Vol 75, Num 3, pp 377-387, issn 1364-2812Article

Highly Dichroic Metallomesogen of Dinuclear Platinum Complex: Synthesis and Liquid Crystal and Photophysical PropertiesYAFEI WANG; QING CHEN; YANHU LI et al.Journal of physical chemistry. C. 2012, Vol 116, Num 9, pp 5908-5914, issn 1932-7447, 7 p.Article

Electroluminescence of carbazole substituted polyacetylenesRUNGUANG SUN; YUNZHANG WANG; XIAOMING ZOU et al.SPIE proceedings series. 1998, pp 332-337, isbn 0-8194-2931-7Conference Paper

Pulsed photoconduction in TCNQ complex saltsELEY, D. D; KINNEAR, S; WILLIS, M. R et al.Synthetic metals. 1994, Vol 64, Num 2-3, pp 233-238, issn 0379-6779Article

Electrophotographic layers based on charge transfer systemsVANNIKOV, A. V; KRYUKOV, A. YU.Journal of information recording materials (1985). 1990, Vol 18, Num 5, pp 341-352, issn 0863-0453Article

Charge photogeneration and transport in side-chain carbazole polymers and co-polymersHUAWEI LI; TERMINE, Roberto; GODBERT, Nicolas et al.Organic electronics (Print). 2011, Vol 12, Num 7, pp 1184-1191, issn 1566-1199, 8 p.Article

Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growthLOO, Roger; COLLAERT, Nadine; VERHEYEN, Peter et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 292-296, issn 0169-4332, 5 p.Conference Paper

Radiation damage of Si₁-_xGe_x S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrationsNAKASHIMA, T; IDEMOTO, T; TSUNODA, I et al.Thin solid films. 2012, Vol 520, Num 8, pp 3337-3340, issn 0040-6090, 4 p.Conference Paper

Mobility of holes in a Si/Si_0.8Ge_0.2/Si metal oxide semiconductor field effect transistorANSARIPOUR, Ghassem.Thin solid films. 2010, Vol 518, Num 19, pp 5599-5603, issn 0040-6090, 5 p.Article

Structure and charge transport properties in MEH-PPVINIGO, Anto Regis; CHIU, Hsiang-Chih; WUNSHAIN FANN et al.Synthetic metals. 2003, Vol 139, Num 3, pp 581-584, issn 0379-6779, 4 p.Conference Paper

Fabrication and photovoltaic properties of multilayered thin films designed by layer-by-layer assembly of poly(p-phenylenevinylene)sOGAWA, Michihiro; TAMANOI, Mika; OHKITA, Hideo et al.Solar energy materials and solar cells. 2009, Vol 93, Num 3, pp 369-374, issn 0927-0248, 6 p.Article

Anisotropic transport of electrons and holes in thin GaAs/AlAs quantum wells grown on (311)A GaAs substratesNODA, Takeshi; SAKAKI, Hiroyuki.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 2116-2118, issn 1386-9477, 3 p.Conference Paper

Enhanced Hole Transport in Short-ChannelGOMEZ, Leonardo; HASHEMI, Pouya; HOYT, Judy L et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 11, pp 2644-2651, issn 0018-9383, 8 p.Article

Charge transport studies in thermally evaporated 2,2',7,7'-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9'-spirobifluorene (spiro-MeOTAD) thin filmRANA, Omwati; SRIVASTAVA, Ritu; GROVER, Rakhi et al.Synthetic metals. 2011, Vol 161, Num 9-10, pp 828-832, issn 0379-6779, 5 p.Article

Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETsPOUYDEBASQUE, Arnaud; ROMANJEK, Krunoslav; LE ROYER, Cyrille et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 12, pp 3240-3244, issn 0018-9383, 5 p.Article

Semiclassical time evolution of the holes from Luttinger HamiltonianJIANG, Z. F; LI, R. D; ZHANG, Shou-Cheng et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 4, pp 045201.1-045201.5, issn 1098-0121Article

Effects of dopant concentration on the mobilities of molecularly doped polymersGRUENBAUM, W. T; LIN, L.-B; MAGIN, E. H et al.Physica status solidi. B. Basic research. 1997, Vol 204, Num 2, pp 729-736, issn 0370-1972Article

Effect of polymer matrices on charge transport in molecularly doped polymersHIRAO, A; NISHIZAWA, H; SUGIUCHI, M et al.Journal of applied physics. 1993, Vol 74, Num 2, pp 1083-1085, issn 0021-8979Article

Hole transport in tri-p-tolylamine-doped bisphenol-A-polycarbonateBORSENBERGER, P. M.Journal of applied physics. 1990, Vol 68, Num 12, pp 6263-6273, issn 0021-8979, 11 p.Article

Synthesis and field-effect properties of α,ω-disubstituted sexithiophenes bearing polar groupsDELL'AQUILA, Antonio; MASTRORILLI, Piero; FRANCESCO NOBILE, Cosimo et al.Journal of material chemistry. 2006, Vol 16, Num 12, pp 1183-1191, issn 0959-9428, 9 p.Article

High-mobility doped polymersBORSENBERGER, P. M; GRUENBAUM, W. T; SORRIERO, L. J et al.Japanese journal of applied physics. 1995, Vol 34, Num 12A, pp L1597-L1598, issn 0021-4922, 2Article

Trap-controlled hopping transportPAI, D. M; YANUS, J. F; STOLKA, M et al.Journal of physical chemistry (1952). 1984, Vol 88, Num 20, pp 4714-4717, issn 0022-3654Article