HIGH-POWER 11 GHZ AMPLIFIER USING HIGH-EFFICIENCY IMPATT DIODES.THORPE W; HUISH P.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 16; PP. 508-509; BIBL. 2 REF.Article

DESIGN CONSIDERATIONS OF HIGH-EFFICIENCY DOUBLE-DRIFT SILICON IMPATT DIODES.LANG CHEE CHANG; DING HUA HU; CHAO CHEN WANG et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 655-657; BIBL. 10 REF.Article

MODULATION D'UNE ONDE ELECTROMAGNETIQUE DANS UNE DIODE IMPATT DISTRIBUEEKURNAUKHOV AV.1980; IZV. VYSS. UCEBN. ZAVED., RADIOFIZ.; ISSN 0021-3462; SUN; DA. 1980; VOL. 23; NO 12; PP. 1507-1510; ABS. ENG; BIBL. 7 REF.Article

FM NOISE MEASUREMENT OF W-BAND IMPATT DIODES WITH A QUASIOPTICAL DIRECT DETECTION SYSTEMHARTH W; LEISTNER D; FREYER J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 9; PP. 355-356; BIBL. 5 REF.Article

THE IMPATT STORY.DE LOACH BC JR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 7; PP. 657-660; BIBL. 14 REF.Article

MEASUREMENT OF SERIES RESISTANCE IN IMPATT DIODESADLERSTEIN MG; HOLWAY LH JR; CHU SLG et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 179-182; BIBL. 4 REF.Article

Etude de la concurrence des oscillations dans les générateurs à diodes de transit à avalancheTOROPIN, V. A.Radiotehnika i èlektronika. 1988, Vol 33, Num 11, pp 2327-2331, issn 0033-8494Article

Gain characteristics of a distributed IMPATT deviceSOOHOO, J.I.E.E.E. transactions on electron devices. 1983, Vol ED 30, Num 10, pp 1405-1406, issn 0018-9383Article

Time-domain modeling of IMPATT oscillatorsGOELLER, T; KAERTNER, F. X.IEEE transactions on circuits and systems. 1989, Vol 36, Num 7, pp 988-996, issn 0098-4094, 9 p.Article

SIMULATION NUMERIQUE DE LA CARACTERISTIQUE DES DIODES IMPATTDATIEV KM.1979; ACTA PHYS. CHEM.; HUN; DA. 1979; VOL. 25; NO 1-2; PP. 23-28; ABS. ENG; BIBL. 5 REF.Article

DESIGN CRITERIA FOR THE "HI" DOPING DENSITY IN HI-LO HIGH-EFFICIENCY IMPATTS.BLAKEY PA.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 13; PP. 329-330; BIBL. 12 REF.Article

MESURE DE L'IMPEDANCE DE DIODES IMPATT AU SILICIUMKUZNETSOV OV.1978; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; UKR; DA. 1978; VOL. 21; NO 10; PP. 119-121; BIBL. 3 REF.Article

CARACTERISTIQUES DU VERROUILLAGE PAR INJECTION SUBHARMONIQUE D'UN OSCILLATEUR IMPATT A ONDE MILLIMETRIQUEHAYASHI R; ONDA M.1977; REV. RADIO RES. LAB.; JAP.; DA. 1977; VOL. 23; NO 123-124; PP. 31-36; ABS. ANGL.; BIBL. 6 REF.Article

INFLUENCE OF TECHNOLOGICAL PARAMETERS ON FM-NOISE OF IMPATT DIODES.MUNSTER V.1976; NACHR.-TECH. Z.; DTSCH.; DA. 1976; VOL. 29; NO 7; PP. 549-551; ABS. ALLEM.; BIBL. 9 REF.Article

Circuit losses and efficiency of distributed IMPATT oscillatorsHUBER, S; CLAASSEN, M.AEU. Archiv für Elektronik und Übertragungstechnik. 1988, Vol 42, Num 6, pp 375-379, issn 0001-1096Article

LARGE-SIGNAL COMPUTER SIMULATION OF IMPATT DIODESSCANLAN SO; BRAZIL TJ.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 1; PP. 12-21; BIBL. 34 REF.Article

LIQUID-NITROGEN-COOLED SUBMILLIMETRE-WAVE SILICON IMPATT DIODES.ISHIBASHI T; INO M; MAKIMURA T et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 10; PP. 299-300; BIBL. 3 REF.Article

MULTICHIP IMPATT POWER COMBINING, A SUMMARY WITH NEW ANALYTICAL AND EXPERIMENTAL RESULTSRUCKER CT; AMOSS JW; HILL GN et al.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 12; PP. 951-957; BIBL. 10 REF.Conference Paper

POWER CONSIDERATIONS IN IMPATT-DIODE ARRAYS WITH INCOMPLETE THERMAL ISOLATIONSUZUKI H; KURITA O; INO M et al.1980; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1980; VOL. 28; NO 6; PP. 632-638; BIBL. 17 REF.Article

CRITICAL DAMPING CONDITION IN IMPATT DIODESSAXENA P.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. K207-K210; BIBL. 6 REF.Article

IMPATT diodes & sources for mm wavesROY, S. K.SPIE proceedings series. 2002, pp 804-818, isbn 0-8194-4500-2, 2VolConference Paper

Near state-of-the-art power p⁺-n-n⁺ D-band IMPATT diode on a wafer with ramped n-n⁺ interfaceSINGH, J. K; GOKGOR, H. S; HOWARD, A. M et al.Proceedings of the IEEE. 1987, Vol 75, Num 12, pp 1688-1690, issn 0018-9219Article

Tunneling-assisted IMPATT operationLUY, J.-F; KUEHNF, R.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 589-595, issn 0018-9383, 7 p.Article

Bruit de scintillation dans le courant des diodes IMPATTKORNILOV, S. A; OVCHINNIKOV, K. D; PAVLOV, V. M et al.Izvestiâ vysših učebnyh zavedenij. Radiofizika. 1985, Vol 28, Num 5, pp 607-613, issn 0021-3462Article

Ionisation par chocs de niveaux profonds dans les diodes à temps de transit d'ionisation en avalanche (IMPATT) à base d'arséniure de galliumLUK'YANCHIKOVA, N. B.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 2, pp 332-337, issn 0015-3222Article