Formation of Au nanocrystals in ceramic oxides by ion implantationFROMKNECHT, R; LINKER, G; WANG, L. M et al.Surface and interface analysis. 2004, Vol 36, Num 2, pp 193-194, issn 0142-2421, 2 p.Conference Paper

RF plasma annealing of implanted MIS structuresLYSENKO, V. S; LOKSHIN, M. M; NAZAROV, A. N et al.Physica status solidi. A. Applied research. 1985, Vol 88, Num 2, pp 705-712, issn 0031-8965Article

Optimization of ion implantation damage annealing by means of high-resolution X-ray diffractionKLAPPE, J. G. E; BARSONY, I; LIEFTING, J. R et al.Thin solid films. 1993, Vol 235, Num 1-2, pp 189-197, issn 0040-6090Article

Triple ion implantation technique for formation of shallow npn bipolar transistor structures in siliconTSAUR, B.-Y; WOODHOUSE, J. D.Applied physics letters. 1984, Vol 44, Num 10, pp 1005-1007, issn 0003-6951Article

Cell growing on ion implanted polytetrafluorethyleneKONDYURINA, I; SHARDAKOV, I; NECHITAILO, G et al.Applied surface science. 2014, Vol 314, pp 670-678, issn 0169-4332, 9 p.Article

Recording complex holograms on photoresist by using an ion-implantation methodWONG, K. W; YIP, W. C; CHENG, L. M et al.Applied optics. 1993, Vol 32, Num 26, pp 4955-4959, issn 0003-6935Article

Selective electroless copper plating on silicon seeded by copper ion implantationBHANSALI, S; SOOD, D. K; ZMOOD, R. B et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 391-394, issn 0040-6090Conference Paper

Possibilité d'une fluctuation dans la formation de la phase amorphe dans le processus d'implantation ioniqueKOMAROV, F. F; MOROSHKIN, N. V.Žurnal tehničeskoj fiziki. 1984, Vol 54, Num 9, pp 1836-1837, issn 0044-4642Article

Development of single-ion implantation : controllability of implanted ion numberMATSUKAWA, T; FUKAI, T; SUZUKI, S et al.Applied surface science. 1997, Vol 117-18, pp 677-683, issn 0169-4332Conference Paper

Comparison between conventional and plasma source ion-implanted femoral knee componentsCHEN, A; SCHEUER, J. T; RITTER, C et al.Journal of applied physics. 1991, Vol 70, Num 11, pp 6757-6760, issn 0021-8979Article

Smart cut<^TM> transfer of 300 mm (110) and (100) Si layers for hybrid orientation technologyBOURDELLE, K. K; AKATSU, T; CHARVET, A.-M et al.IEEE international SOI conference. 2004, pp 98-99, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

The fractal approach for the evaluation of microdefects in siliconFEDTCHOUK, A. P; RUDENKO, R. A; SHEVCHENKO, L. D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 34, Num 2-3, pp 164-167, issn 0921-5107Article

Ion beam induced damage in epitaxial TiN filmsPADMANABHAN, K. R; SAITOH, K; MIYAGAWA, Y et al.Japanese journal of applied physics. 1991, Vol 30, Num 4, pp 796-801, issn 0021-4922, 1Article

High-dose neutron generation from plasma ion implantationUHM, H. S; LEE, W. M.Journal of applied physics. 1991, Vol 69, Num 12, pp 8056-8063, issn 0021-8979Article

Implantation-enhanced oxidation of tantalum for capacitor structuresMOHAMMED, M. A; MORGAN, D. V; NOBES, M et al.Electronics Letters. 1989, Vol 25, Num 5, pp 329-330, issn 0013-5194, 2 p.Article

Laser-induced photothermal reflectance investigation of silicon damaged by arsenic ion implantation: a temperature studyVITKIN, I. A; CHRISTOFIDES, C; MANDELIS, A et al.Applied physics letters. 1989, Vol 54, Num 24, pp 2392-2394, issn 0003-6951, 3 p.Article

Ion-implanted and permalloy hybrid magnetic bubble memory devicesSUGITA, Y; SUZUKI, R; IKEDA, T et al.IEEE transactions on magnetics. 1986, Vol 22, Num 4, pp 239-246, issn 0018-9464Article

Precise ion-implantation analysis including channeling effectsTAKEDA, T; TAZAWA, S; YOSHII, A et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 9, pp 1278-1285, issn 0018-9383Article

Méthode de détermination du coefficient de diffusion et du profil d'implantation lors du bombardement ionique d'un solideVEKSLER, V. I.Žurnal tehničeskoj fiziki. 1985, Vol 55, Num 11, pp 2212-2215, issn 0044-4642Article

An analytical model for the narrow-width effect in ion-implanted MOSFETLAI, P. T; CHENG, Y. C.Solid-state electronics. 1984, Vol 27, Num 7, pp 639-649, issn 0038-1101Article

Modifications par implantation ionique de l'endommagement par fatigue du cuivre = Modifications in fatigue damage of Cu induced by ion implantationMENDEZ, J; QUINTARD, M; VIOLAN, P et al.Annales de chimie (Paris. 1914). 1984, Vol 9, Num 3, pp 311-313, issn 0151-9107Article

Application of ion implantation for doping of polyacetylene filmsKOSHIDA, N; WACHI, Y.Applied physics letters. 1984, Vol 45, Num 4, pp 436-437, issn 0003-6951Article

International Workshop on Plasma-Based Ion Implantation & Deposition (PBII1D 2007)MÄNDL, Stephan; MÖLLER, Wolfhard; RAUSCHENBACH, Bernd et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 4, pp 949-988, issn 1862-6300, 39 p.Conference Paper

Carbon ion implantation into pure aluminium at low fluencesFOERSTER, C. E; FITZ, T; DEKORSY, T et al.Surface & coatings technology. 2005, Vol 192, Num 2-3, pp 317-322, issn 0257-8972, 6 p.Article

Increased band A cathodoluminescence after carbon ion implantation and annealing of diamondPRINS, J. F.Diamond and related materials. 1996, Vol 5, Num 9, pp 907-913, issn 0925-9635Article