kw.\*:("InP E-HEMT")
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0.15-μm-Gate InAlAs/InGaAs/InP E-HEMTs utilizing Ir/Ti/Pt/Au gate structureKIM, Seiyon; ADESIDA, Ilesanmi.IEEE electron device letters. 2006, Vol 27, Num 11, pp 873-876, issn 0741-3106, 4 p.Article
