PROCEEDINGS: MICROCIRCUIT ENGINEERING 81/INTERNATIONAL CONFERENCE ON MICROLITHOGRAPHY, LAUSANNE, SEPTEMBER 28-30, 1981OOSENBRUG A ED.1981; MICROCIRCUIT ENGINEERING 81. INTERNATIONAL CONFERENCE ON MICROLITHOGRAPHY/1981-09-28/LAUSANNE; CHE; LAUSANNE: SWISS FEDERAL INSTITUTE OF TECHNOLOGY; DA. 1981; 546 P.; 21 CMConference Proceedings

INTERNATIONAL CONFERENCE ON MICROLITHOGRAPHY; MICROCIRCUIT ENGINEERING 82/COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, GRENOBLE, 5-8 OCTOBRE 19821982; MICROCIRCUIT ENGINEERING 82. COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE/1982-10-05/GRENOBLE; FRA; GRENOBLE: COMITE DU COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE; DA. 1982; 395 P.; 30 CMConference Proceedings

AN OVERVIEW OF E-BEAM MASK-MAKINGREYNOLDS JA.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 8; PP. 87-94; BIBL. 6 REF.Article

ELABORATORI E TECNOLOGIE AVANZATE VERSO I LIMITI DELLA MICROELETTRONICA. = CALCULATEURS ET TECHNOLOGIES AVANCEES VERS LES LIMITES DE LA MICROELECTRONIQUE1977; INGEGNERE; ITAL.; DA. 1977; VOL. 52; NO 11; PP. 463-466Article

AZIDE-PHENOLIC RESIN PHOTORESISTS FOR DEEP UV LITHOGRAPHYIWAYANAGI T; KOHASHI T; NONOGAKI S et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1306-1310; BIBL. 18 REF.Article

ION BEAMS PROMISE PRACTICAL SYSTEMS FOR SUBMICROMETER WAFER LITHOGRAPHYSELIGER RL; SULLIVAN PA.1980; ELECTRONICS; USA; DA. 1980; VOL. 53; NO 7; PP. 142-146Article

A REVIEW OF FINE-LINE LITHOGRAPHIC TECHNIQUES: PRESENT AND FUTUREWATTS RK; BRUNING JH.1981; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1981; VOL. 24; NO 5; PP. 99-105; BIBL. 42 REF.Article

ION PROJECTION MICROLITHOGRAPHYSTENGL G; KAITNA R; LOSCHNER H et al.1982; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 8; PP. 104-109; BIBL. 45 REF.Article

EVAPORATED AGBR AS A POTENTIAL PHOTOSENSITIVE MATERIAL FOR THE NEW LITHOGRAPHIESLAVINE JM; MASTERS JI; GOLDBERG GM et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1311-1314; BIBL. 11 REF.Article

DEEP UV1:1 PROJECTION LITHOGRAPHY UTILIZING NEGATIVE RESIST MRSMATSUZAWA T; TOMIOKA H.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1284-1288; BIBL. 8 REF.Article

DEVICE PROCESSING USING THE TRILEVEL TECHNIQUEMORAN JM; MAYDAN D.1980; POLYM. ENG. SCI.; ISSN 0032-3888; USA; DA. 1980; VOL. 20; NO 16; PP. 1097-1101; BIBL. 9 REF.Article

NEUE LITHOGRAFIEVERFAHREN IN DER HALBLEITERTECHNIK = NOUVELLES METHODES LITHOGRAPHIQUES DANS LA TECHNIQUE DES SEMICONDUCTEURSHANNO S.1978; ELEKTRONIK; DEU; DA. 1978; VOL. 27; NO 11; PP. 59-66; BIBL. 9 REF.Article

POLYDIALLYLORTHOPHTHALATE RESIST FOR ELECTRON-BEAM LITHOGRAPHYYONEDA Y; KITAMURA K; NAITO J et al.1980; POLYM. ENG. SCI.; ISSN 0032-3888; USA; DA. 1980; VOL. 20; NO 16; PP. 1110-1114; BIBL. 6 REF.Article

MICROLITHOGRAPHYDECKERT C.1980; CIRCUITS MANUF.; USA; DA. 1980; VOL. 20; NO 7; PP. 39-54; 13 P.; BIBL. 32 REF.Article

LITHOGRAFIETECHNIKEN FUER HOECHST-INTEGRIERTE SCHALTUNGEN = TECHNIQUES LITHOGRAPHIQUES POUR CIRCUITS FORTEMENT INTEGRESSCHAUMBURG H.1979; MESSEN U. PRUEFEN; DEU; DA. 1979; NO 10; PP. 767-771; (3 P.)Article

PROCEEDINGS/SUBMICRON LITHOGRAPHY, CONFERENCE, SANTA CLARA CA, MARCH 29-30, 1982BLAIS PD ED.1982; SUBMICRON LITHOGRAPHY. CONFERENCE/1982-03-29/SANTA CLARA CA; USA; BELLINGHAM: THE SOCIETY OF PHOTO-OPTICAL ENGINEERING; DA. 1982; 187 P.; 28 CM; ISBN 0-89252-368-9; SPIE PROCEEDINGS; 333Conference Proceedings

BASIC TECHNOLOGY FOR VLSI. IITARUI Y.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1321-1331; BIBL. 26 REF.Article

LITHOGRAPHY CHASES THE INCREDIBLE SHRINKING LINELYMAN J.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 8; PP. 105-116Article

RESOLUTION AND LINEWIDTH TOLERANCES IN ELECTRON BEAM AND OPTICAL PROJECTION LITHOGRAPHYTUNG SYMON CHANG; KYSER DF; TING CH et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1295-1300; BIBL. 15 REF.Article

POSITIVE TYPE RESISTS FOR MICROFABRICATIONKAKUCHI M; SUGAWARA S; SUKEGAWA K et al.1979; REV. ELECTR. COMMUNIC. LAB.; JPN; DA. 1979; VOL. 27; NO 11-12; PP. 1113-1118; BIBL. 8 REF.Article

ZUR MIKROLITHOGRAPHIE FUER PLANARE BAUELEMENTE = LA REALISATION DE COMPOSANTS PLANAR PAR MICROLITHOGRAPHIEHERSENER J; RICKER T.1979; WISSENSCH. BER. A.E.G.-TELEFUNKEN; DEU; DA. 1979; VOL. 52; NO 1-2; PP. 139-147; ABS. ENG; BIBL. 32 REF.Article

MIKROSTRUKTUREN UND MIKROELEKTRONIK = MICROSTRUCTURES ET MICROELECTRONIQUEAUTH J.1981; NACHRICHTENTECH., ELEKTRON.; ISSN 0323-4657; DDR; DA. 1981; VOL. 31; NO 11; PP. 450-452; BIBL. 4 REF.Article

RADIATION LEVELS ASSOCIATED WITH ADVANCED LITHOGRAPHIC TECHNIQUESGALLOWAY KF; MAYO S; ROITMAN P et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 12; PP. 2245-2248; BIBL. 17 REF.Article

NOUVELLE METHODE D'ETUDE DU POUVOIR DE RESOLUTION DES ENDUITS "ELECTRONIQUES" A L'AIDE D'UN MASQUE "SUB-MICRON" AU CONTACT AVEC L'ENDUIT RESISTANTVALIEV KA; VELIKOV LV; DUSHENKOV SD et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 5; PP. 447-450; BIBL. 3 REF.Article

LITHIUM-ION-BEAM EXPOSURE OF PMMA-LAYERS WITHOUT PROXIMITY-EFFECTSPEIDEL R; BEHRINGER U.1980; OPTIK; DEU; DA. 1980; VOL. 54; NO 5; PP. 439-444; ABS. ENG; BIBL. 3 REF.Article