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BESONDERHEITEN DES ENTWURFS INTEGRIERTER MIS-SCHALTKREISE = PARTICULARITES DE LA CONCEPTION DES CIRCUITS INTEGRES MOSROESSLER F.1982; RADIO FERNS. ELEKTRON.; ISSN 0033-7900; DDR; DA. 1982; VOL. 31; NO 1; PP. 39-43Article

MOS AREA SENSOR. II: LOW-NOISE MOS AREA SENSOR WITH ANTIBLOOMING PHOTODIODESOHBA S; NAKAI M; ANDO H et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1682-1687; BIBL. 17 REF.Article

MOS AREA SENSOR. I: DESIGN CONSIDERATION AND PERFORMANCE OF AN N-P-N STRUCTURE 484 X 384 ELEMENT COLOR MOS IMAGERKOIKE N; TAKEMOTO I; SATOH K et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1676-1681; BIBL. 9 REF.Article

INTEGRATION VON FILTERN MIT LINEAREN MOS-SCHALTUNGEN = L'INTEGRATION DE FILTRES DANS LES CIRCUITS MOS LINEAIRESCHRISTIANSEN P; GEBHARDT PJ; KOHLBACHER G et al.1979; WISSENSCH. BER. A.E.G.-TELEFUNKEN; DEU; DA. 1979; VOL. 52; NO 1-2; PP. 131-138; ABS. ENG; BIBL. 19 REF.Article

DIGITALWERTKOMPARATOREN MIT NEUEN IS = COMPARATEUR DE VALEURS NUMERIQUES COMPORTANT DE NOUVEAUX CIRCUITS INTEGRESSTEINHAGEN H.1983; RADIO FERNSEHEN ELEKTRONIK; ISSN 0033-7900; DDR; DA. 1983; VOL. 32; NO 2; PP. 123-125; BIBL. 3 REF.Article

INTEGRATED NMOS OUTPUT STAGE WITH LOW OUTPUT IMPEDANCECALZOLARI PU; MASETTI G; TURCHETTI C et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 218-220; BIBL. 8 REF.Article

VERS DES AMPLIFICATEURS OPERATIONNELS INTEGRES HOMOGENES EN MOSBAILLIEU F.1979; ELECTRON. APPL. INDUSTR.; FRA; DA. 1979; NO 276; PP. 71-75Article

WHY DON'T THESE PARTS WORK IN OUR CIRCUITS. PREVENTING CMOS FAILURE.HART W.1978; EVAL. ENGNG; USA; DA. 1978; VOL. 17; NO 5; PP. 42-44Article

CIRCUITOS INTEGRADOS MOS DE MEMORIAS DINAMICAS.RODRIGUEZ CUBERO V.1976; REV. TELEGR. ELECTRON.; ARGENT.; DA. 1976; VOL. 65; NO 768; PP. 770-772Article

P-MOS FIELD INVERSION VOLTAGE ENHANCEMENT VIA A CHROMIC ACID CLEANHARPER F.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 7; PP. 683-684; BIBL. 13 REF.Article

COSMIC-RAY-INDUCED ERRORS IN MOS DEVICESPICKEL JC; BLANDFORD JT JR.1980; J.E.E.E. TRANS. NUCL. SCI.; USA; DA. 1980; VOL. 27; NO 2; PP. 1006-1015; BIBL. 10 REF.Article

PROCESSOR FAMILY SPECIALIZES IN DEDICATED CONTROL.WEISSBERGER A; INWIN J; SOO NAM KIM et al.1976; ELECTRONICS; U.S.A.; DA. 1976; VOL. 49; NO 14; PP. 84-89Article

V.M.O.S. IMPROVES EFFICIENCY THROUGH SWITCHING PERFORMANCEREGAN P.1979; ELECTRON. AND POWER; GBR; DA. 1979; VOL. 25; NO 9; PP. 629-633; BIBL. 5 REF.Article

RELIABILITY OF C.M.O.S. CIRCUITS.GALLACE LJ.1978; NEW ELECTRON.; G.B.; DA. 1978; VOL. 11; NO 8; PP. 48-62 (6P.)Article

EXPLORATION ET CONTROLE D'UNE TECHNOLOGIE MOS LSI PAR "VEHICULE-TEST"LAGORSSE JM; LEFEBVRE.1978; ONDE ELECTR.; FRA; DA. 1978; VOL. 58; NO 12; PP. 823-829; ABS. ENGArticle

PERFORMANCE OF INTEGRATED DYNAMIC MOS AMPLIFIERSHOSTICKA BJ; HOEFFLINGER B; HERBST D et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 8; PP. 298-300; BIBL. 7 REF.Article

STEP LINEAR ANALYSIS OF MOS ICS WITH RESISTIVE, CAPACITIVE AND INDUCTIVE ELEMENTSANDREEV SK.1980; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1980; VOL. 48; NO 5; PP. 413-417; BIBL. 3 REF.Article

A DENSE GATE MATRIX LAYOUT METHOD FOR MOS VLSILOPEZ AD; LAW HFS.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 736-740; BIBL. 8 REF.Article

CMOS RELIABILITY.GALLACE LJ; PUJOL HL; SCHNABLE GL et al.1978; MICROELECTRON. AND RELIABIL.; GBR; DA. 1978; VOL. 17; NO 2; PP. 287-304; BIBL. 2 P.Article

DIGITALES FRONTPLATTENANZEIGEINSTRUMENT. = APPAREIL POUR AFFICHAGE NUMERIQUEDUMMER J; KLEIN R.1976; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1976; VOL. 25; NO 13; PP. 422-434 (5P.)Article

M.O.S. SWITCHED-CAPACITOR AMPLIFIERSVISWANATHAN TR; FARUQUE SM; SINGHAL K et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 634-635; BIBL. 1 REF.Article

PROTECTION FOR STATIC SENSITIVE DEVICESMOLYNEUX CHILD JW; KANAREK JJ.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 4; PP. 42-46; (3 P.)Article

HMOS-PROZESS FUEHRT ZU LEISTUNGSFAEHIGEM 16-BIT-MIKROPROZESSER = REALISATION D'UN MICROPROCESSEUR PUISSANT A 16 BITS AU MOYEN DE CIRCUITS MOS A HAUTE PERFORMANCEDORN L.1979; ELEKTRONIK; DEU; DA. 1979; VOL. 28; NO 5; PP. 57-63; BIBL. 2 REF.Article

CONSEILS POUR LA MANUTENTION DES CMOS.YATES V.1976; COMPOSANTS MEC. ELECTR. ELECTRON.; FR.; DA. 1976; NO 76; PP. 103-105Article

MACTIS - A MASK CHECKING TIMING SIMULATORKAWAMURA M; HIRABAYASHI K.1980; I.E.E.E. TRANS. CIRCUITS SYST.; USA; DA. 1980; VOL. 27; NO 12; PP. 1276-1278; BIBL. 5 REF.Article

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