kw.\*:("Misfit dislocations")
Results 1 to 25 of 1998
Selection :
An atomistic simulation and phenomenological approach of misfit dislocation in metal/oxide interfacesLONG, Y; CHEN, N. X.Surface science. 2008, Vol 602, Num 5, pp 1122-1130, issn 0039-6028, 9 p.Article
Quasiperiodic interfaces and tilt boundaries of finite extentOVID'KO, I. A.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2000, Vol 280, Num 2, pp 354-357, issn 0921-5093Article
Growth direction dependence on strain relief by misfit dislocations in strained-layer heterostructuresZOU, J.Thin solid films. 1993, Vol 235, Num 1-2, pp 6-9, issn 0040-6090Article
On the stand-off positions of misfit dislocationsGUTKIN, M. Y; ROMANOV, A. E.Physica status solidi. A. Applied research. 1994, Vol 144, Num 1, pp 39-57, issn 0031-8965Article
Analysis of interfacial misfit dislocation by X-ray multiple diffractionMORELHAO, S. L; CARDOSO, L. P.Solid state communications. 1993, Vol 88, Num 6, pp 465-469, issn 0038-1098Article
Stress relaxation by generation of L-shape misfit dislocations in (001) heterostructures with diamond and sphalerite latticesKOLESNIKOV, A. V; VASILENKO, A. P; TRUKHANOV, E. M et al.Applied surface science. 2000, Vol 166, pp 57-60, issn 0169-4332Conference Paper
Position dependant critical thickness in finite epitaxial systemsKUMAR, Arun; SUBRAMANIAM, Anandh.Applied surface science. 2013, Vol 275, pp 60-64, issn 0169-4332, 5 p.Conference Paper
Strain mapping along Al-Pb interfacesRÖSNER, Harald; KOCH, Christoph T; WILDE, Gerhard et al.Acta materialia. 2010, Vol 58, Num 1, pp 162-172, issn 1359-6454, 11 p.Article
Nanoscale dislocation patterning in Bi(111)/Si(001) heteroepitaxyJNAWALI, G; HATTAB, H; BOBISCH, C. A et al.Surface science. 2009, Vol 603, Num 13, pp 2057-2061, issn 0039-6028, 5 p.Article
Misfit dislocations in a hollow cylindrical film grown on a hole surfaceSHEINERMAN, A. G; GUTKIN, M. Yu.Scripta materialia. 2001, Vol 45, Num 1, pp 81-87, issn 1359-6462Article
Sur la relaxation de surface d'une dislocation vis interfaciale = On the surface relaxation of an interfacial screw dislocationBONNET, R.Comptes rendus de l'Académie des sciences. Série 2, Mécanique, Physique, Chimie, Sciences de l'univers, Sciences de la Terre. 1993, Vol 317, Num 8, pp 1003-1006, issn 0764-4450Article
Nonuniform misfit dislocation distributions in filmsROMANOV, A. E; AIFANTIS, E. C.Scripta metallurgica et materialia. 1994, Vol 30, Num 12, pp 1581-1586, issn 0956-716XArticle
Impact of misfit dislocations on wavefront distortion in Si/SiGe/Si optical waveguidesTRITA, A; BRAGHERI, F; DOBELI, M et al.Optics communications. 2009, Vol 282, Num 24, pp 4716-4722, issn 0030-4018, 7 p.Article
Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBEWERNER, J; OEHME, M; LYUTOVICH, K et al.Surface science. 2007, Vol 601, Num 13, pp 2774-2777, issn 0039-6028, 4 p.Conference Paper
Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substratesDIMITRAKOPULOS, G. P; BAZIOTI, C; GRYM, J et al.Applied surface science. 2014, Vol 306, pp 89-93, issn 0169-4332, 5 p.Conference Paper
Misfit dislocations in an annular film grown on a cylindrical nanowire with different elastic constantsFANG, Q. H; SONG, H. P; LIU, Y. W et al.Physica. B, Condensed matter. 2009, Vol 404, Num 14-15, pp 1897-1900, issn 0921-4526, 4 p.Article
Dislocation description of martensite interfaces based on misfit analysisZHANG, W.-Z; WU, J.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2006, Vol 438-40, pp 118-121, issn 0921-5093, 4 p.Conference Paper
Study of the misfit dislocations in semiconductor heterostructures by density functional TB molecular dynamics and path probability methodsMASUDA-JINDO, K; KIKUCHI, R.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 615-617, issn 0959-8324, 3 p.Conference Paper
Gliding at interface during thin film buckling: A coupled atomistic/elastic approachRUFFINI, A; DURINCK, J; COLIN, J et al.Acta materialia. 2012, Vol 60, Num 3, pp 1259-1267, issn 1359-6454, 9 p.Article
Spatially and energetically resolved optical mapping of self-aligned InAs quantum dotsWELSCH, H; KIPP, T; KÖPPEN, T et al.Semiconductor science and technology. 2008, Vol 23, Num 4, issn 0268-1242, 045016.1-045016.3Article
Martensitic transformations in 'unfamiliar' systemsPOND, R. C; CHAI, Y. W; CELOTTO, S et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2004, Vol 378, Num 1-2, pp 47-51, issn 0921-5093, 5 p.Conference Paper
Coincidence structures of interfacial steps and secondary misfit dislocations in the habit plane between Widmanstätten cementite and austeniteYE, F; ZHANG, W.-Z.Acta materialia. 2002, Vol 50, Num 11, pp 2761-2777, issn 1359-6454Article
Dislocation-interface interaction - stress accommodation processes at interfacesPRIESTER, L.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2001, Vol 309-10, pp 430-439, issn 0921-5093Conference Paper
Misfit dislocations in wire composite solidsGUTKIN, M. Yu; OVID'KO, I. A; SHEINERMAN, A. G et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 25, pp 5391-5401, issn 0953-8984Article
Role of surface step on misfit dislocation nucleation and critical thickness in semiconductor heterostructuresICHIMURA, M; NARAYAN, J.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 31, Num 3, pp 299-303, issn 0921-5107Article