RELIABILITY OF AUGE/PT AND AUGE/NI OHMIC CONTACTS ON GAASLEE CP; WELCH BM; FLEMING WP et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 12; PP. 407-408; BIBL. 4 REF.Article

RADIATION-INDUCED DEGRADATION OF OHMIC CONTACTS.BLUNDELL R; MORGAN DV; HOWES MJ et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 483-484; BIBL. 5 REF.Article

OHMIC CONTACTS TO GAASMITRA RN; ROY SB; DAW AN et al.1979; J. SCI. INDUSTR. RES.; IND; DA. 1979; VOL. 38; NO 8; PP. 410-413; BIBL. 31 REF.Article

FILM PROPERTIES OF MOSI₂ AND THEIR APPLICATION SELF-ALIGNED MOSI₂ GATE MOSFETMOCHIZUKI T; TSUJIMARU T; KASHIWAGI M et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1431-1435; BIBL. 13 REF.Article

ALUMINIUM ALLOYING IN SILICON INTEGRATED CIRCUITS.BERTHOUD LA.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 43; NO 3; PP. 319-329; BIBL. 26 REF.Article

OHMIC CONTACT TO P-TYPE GAP.PFEIFER J.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 11; PP. 927-929; H.T. 1; BIBL. 11 REF.Article

OHMIC CONTACTS TO GAAS LASERS USING ION-BEAM TECHNOLOGYLINDSTROM C; TIHANYI P.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 1; PP. 39-44; BIBL. 18 REF.Article

OHMIC CONTACTS TO P- AND N-TYPE GASBHEINZ C.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 2; PP. 247-254; BIBL. 12 REF.Article

SENSIBILITE VOLT-WATT D'UN DETECTEUR AVEC JONCTION N-N⁺ PONCTUELLEASHMONTAS SP; VINGYALIS LL; GUOGA VI et al.1983; RADIOTEHNIKA I ELEKTRONIKA; ISSN 508322; SUN; DA. 1983; VOL. 28; NO 3; PP. 577-582; BIBL. 14 REF.Article

LOW-TEMPERATURE SINTERED AUGE/GAAS OHMIC CONTACTAINA O; KATZ W; BALIGA BJ et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 777-780; BIBL. 14 REF.Article

MODELING THE SPACE-CHARGE-LAYER BOUNDARY OF A FORWARD-BIASED JUNCTIONWARNER RM JR; LEE K.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 7; PP. 5304-5310; BIBL. 15 REF.Article

LASER ANNEALING OF OHMIC CONTACTS ON GAASORABY AH; MURAKAMI K; YUBA Y et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 7; PP. 562-564; BIBL. 8 REF.Article

NONALLOYED OHMIC CONTACTS TO ELECTRON-BEAM-ANNEALSED SE-ION-IMPLANTED GAASPIANETTA PA; STOLTE CA; HANSEN JL et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 597-599; BIBL. 18 REF.Article

OHMIC CONTACTS ON SPUTTERED A-SI: HBRUYERE JC; DENEUVILLE A.1980; J. PHYS., LETTRES; FRA; DA. 1980; VOL. 41; NO 2; PP. L27-L29; ABS. FRE; BIBL. 16 REF.Article

OHMIC CONTACTS TO P-TYPE INP USING BE-AU METALLIZATIONTEMKIN H; MCCOY RJ; KERAMIDAS VG et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 6; PP. 444-446; BIBL. 11 REF.Article

BEHAVIOUR OF GOLD IN THE VICINITY OF THE AU-GE/N-GAAS INTERFACE DURING ANNEALINGVYAS PD; SHARMA BL.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 51; NO 2; PP. L21-L23; BIBL. 12 REF.Article

TWO-CARRIER OPERATION OF OHMIC CONTACTS ON SILICON.CARUSO A; SPIRITO P; VITALE GF et al.1977; ALTA FREQ.; ITAL.; DA. 1977; VOL. 46; NO 2; PP. 123-126; BIBL. 8 REF.Article

OHMIC CONTACTS TO P-TYPE GAAS.ISHIHARA O; NISHITANI K; SAWANO H et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 7; PP. 1411-1412; BIBL. 9 REF.Article

ELECTROPLATING USED FOR OHMIC CONTACTSWEHMANN HH; AYTAC S; SCHLACHETZKI A et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 149-153; BIBL. 19 REF.Article

OBTAINING THE SPECIFIC CONTACT RESISTANCE FROM TRANSMISSION LINE MODEL MEASUREMENTSREEVES GK; HARRISON HB.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 5; PP. 111-113; BIBL. 7 REF.Article

OHMIC CONTACTS TO SI-IMPLANTED INPYAMAGUCHI E; NISHIOKA T; OHMACHI Y et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 263-265; BIBL. 8 REF.Article

RECTIFYING AND OHMIC CONTACTS TO GAINASPMORGAN DV; FREY J; DEVLIN WJ et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1202-1205; BIBL. 6 REF.Article

LARGE LINEAR AREA LIGH-SPOT-POSITION-SENSITIVE PHOTODIODE.FIERET J; KWAKERNAAK A; MIDDELHOEK S et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 14; PP. 422-423; BIBL. 6 REF.Article

THE STABILITY OF OHMIC CONTACTS TO CDS FILMS.BHATTACHARYYA AB; NAHAR RK; NAGCHOUDHURI D et al.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 17; PP. L245-L246; BIBL. 2 REF.Article

OBTENTION DE CONTACTS OHMIQUES SUR DES MONOCRISTAUX DE BORE PAR PRECIPITATION ELECTROSTATIQUEAMANDZHANOV N; KARIMOV R KH.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 3; PP. 255-256; BIBL. 5 REF.Article