DECAPAGE IONIQUE DES HETEROJONCTIONS INP-INGAASPZARGAR'YANTS MN; KRAPUKHIN VV; KRYKANOV IA et al.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 10; PP. 2102-2104; BIBL. 9 REF.Article

GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

DIFFERENCE OF THERMAL EXPANSION COEFFICIENTS IN GA_1-XAL_XP-GAP HETEROSTRUCTURESBESSOLOV VN; KONNIKOV SG; UMANSKIJ VE et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 411-412; BIBL. 9 REF.Article

HYDROGENATION ACTIVITY OF METAL PHOSPHIDES AND PROMOTING EFFECT OF OXYGENNOZAKI F; TOKUMI M.1983; JOURNAL OF CATALYSIS; ISSN 0021-9517; USA; DA. 1983; VOL. 79; NO 1; PP. 207-210; BIBL. 3 REF.Article

CRYSTAL CHEMISTRY OF M₁₂P₇ PHASES IN RELATION WITH THE M₂P PHOSPHIDESMAAREF S; MADAR R; CHAUDOUET P et al.1981; J. SOLID STATE CHEM.; ISSN 0022-4596; GBR; DA. 1981; VOL. 40; NO 2; PP. 131-135; BIBL. 11 REF.Article

INGAASP PLANAR BURIED HETEROSTRUCTURE LASER DIODE (PBH-LD) WITH VERY LOW THRESHOLD CURRENTMITO I; KITAMURA M; KAEDE K et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 1; PP. 2-3; BIBL. 4 REF.Article

GA_XIN_1-XAS_YP_1-Y/INP TERRACED SUBSTRATE SINGLE-MODE LASERWAKAO K; MORIKI K; KITAMURA M et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 1009-1013; BIBL. 22 REF.Article

LIQUID PHASE EPITAXIAL GROWTH OF CADMIUM-DOPED INGAASP/INP DOUBLE HETEROSTRUCTURE LASERSTAMARI N.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 792-794; BIBL. 20 REF.Article

MODE REFLECTIVITY OF TILTED MIRRORS IN SEMICONDUCTOR LASERS WITH ETCHED FACETSIGA K; WAKAO K; KUNIKANE T et al.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 14; PP. 2367-2371; BIBL. 20 REF.Article

A NEW EXPERIMENTAL APPROACH FOR STUDYING THE GAIN BROADENING MECHANISM IN SEMICONDUCTOR LASERSKAWAGUCHI H.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 3; PART. 1; PP. 1209-1211; BIBL. 12 REF.Article

4 X 8 OPTOELECTRONIC MATRIX SWITCH EQUIPMENT USING INGAASP/INP HETEROJUNCTION SWITCHING PHOTODIODESUESUGI N; MACHIDA S; KIMURA T et al.1983; OPTICAL AND QUANTUM ELECTRONICS; ISSN 0306-8919; GBR; DA. 1983; VOL. 15; NO 3; PP. 217-224; BIBL. 11 REF.Article

DEGRADED INGAASP/INP DOUBLE HETEROSTRUCTURE LASER OBSERVATION WITH ELECTRON PROBE MICROANALYZERSEKI M; FUKUDA M; WAKITA K et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 2; PP. 115-117; BIBL. 7 REF.Article

GAINASP/INP INTEGRATED LASER WITH BUTT-JOINTED BUILT-IN DISTRIBUTED-BRAGG-REFLECTION WAVEGUIDEABE Y; KISHINO K; SUEMATSU Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 945-947; BIBL. 10 REF.Article

HIGH POWER OUTPUT INGAASP/INP BURIED HETEROSTRUCTURE LASERSNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 782-783; BIBL. 4 REF.Article

V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASERISHIKAWA H; IMAI H; TANAHASHI T et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 13; PP. 465-467; BIBL. 5 REF.Article

FACET DEGRADATION AND PASSIVATION OF INGAASP/INP LASERSFUKUDA M; TAKAHEI K; IWANE G et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 18-21; BIBL. 10 REF.Article

MECHANISM OF ASYMMETRIC LONGITUDINAL MODE COMPETITION IN INGAASP/INP LASERSISHIKAWA H; YANO M; TAKUSAGAWA M et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 553-555; BIBL. 22 REF.Article

NEW CHEMICAL ETCHING SOLUTION FOR INP AND GALNASP GRATINGSSAITOH T; MIKAMI O; NAKAGOME H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 408-409; BIBL. 7 REF.Article

CURRENT DEPENDENCE OF TEMPERATURE RISE IN CW OPERATED GAINASP/INP DH LASER DIODESBROSSON P; THOMPSON GHB.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 957-958; BIBL. 6 REF.Article

LOW THRESHOLD CURRENT DENSITY INGAASP/INP LASERS GROWN IN A VERTICAL LIQUID PHASE EPITAXIAL SYSTEMTAMARI N; BALLMAN AA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 185-187; BIBL. 12 REF.Article

VERY LOW DARK CURRENT P-P-P BASE INGAASP/INP PHOTOTRANSISTORSKOBAYASHI M; SAKAI S; UMENO M et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L159-L161; BIBL. 8 REF.Article

DARSTELLUNG, EIGENSCHAFTEN UND KRISTALLSTRUKTUR VON CU₂P₇ UND STRUKTURVERFEINERUNGEN VON CUP₂ UND AGP₂ = PREPARATION, PROPRIETES ET STRUCTURE CRISTALLINE DE CU₂P₇ ET AFFINEMENTS DE STRUCTURE DE CUP₂ ET AGP₂MOLLER MH; JEITSCHKO W.1982; ZEITSCHRIFT FUER ANORGANISCHE UND ALLGEMEINE CHEMIE; ISSN 0044-2313; DDR; DA. 1982; VOL. 491; NO 8; PP. 225-236; ABS. ENG; BIBL. 35 REF.Article

A NOVEL TECHNIQUE FOR GAINASP/INP BURIED HETEROSTRUCTURE LASER FABRICATIONLIAU ZL; WALPOLE JN.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 568-570; BIBL. 15 REF.Article

HYPERSURFACE OF EINSTEIN MANIFOLDSKOISO N.1981; ANN. SCI. EC. NORM. SUPER.; ISSN 0012-9593; FRA; DA. 1981; VOL. 14; NO 4; PP. 433-443; BIBL. 11 REF.Article