Contribution à l'étude des circuits de technologie silicium sur saphir sous irradiation transitoire = Contribution to the study of the silicon on sapphire technology under transient radiationSaussine, Jean-Daniel; Gasiot, Jean.1992, 172 p.Thesis

A NEW MICROPHONE BASED ON AN OPTICAL MEASURING PRINCIPLE.BUDAL K.1974; J. SOUND VIBR.; G.B.; DA. 1974; VOL. 36; NO 4; PP. 521-526Article

Etude expérimentale et théorique de l'évolution des spectres de photoconductivité de l'arséniure de gallium semi-isolant = Experimental and theorical study of the photoconductivity spectra time evolution of semi-inslating GaAsDiallo, Alpha Amadou; Farvacque, Jean-Louis.1990, 93 p.Thesis

Etude numérique de la cellule photovoltaïque organique MPP/ZnPc = Numerical study of the organic photovoltaic cell MPP/ZnPcBOUCHEKOUF, S; MARIR, B; BENABBAS-MARIR, M et al.Revue des énergies renouvelables. 2009, Vol 12, Num 2, pp 163-174, issn 1112-2242, 12 p.Article

CURRENT PHOTORESPONSE OF AN ELECTROLYTE-ZINC SELENIDE JUNCTIONLEMASSON P; GAUTRON J.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO 1; PP. 303-309; ABS. FRE; BIBL. 16 REF.Article

USE OF PHOTOCURRENT-VOLTAGE-CHARACTERISTICS OF MOS STRUCTURES TO DETERMINE INSULATOR BULK TRAPPED CHARGE DENSITIES AND CENTROIDS.DIMARIA DJ; WEINBERG ZA; AITKEN JM et al.1977; J. ELECTRON. MATER.; U.S.A.; DA. 1977; VOL. 6; NO 3; PP. 207-219; BIBL. 11 REF.Article

AMELIORATION DES INDICES LORS DE LA MODULATION DU PHOTOCOURANT DES PHOTOMULTIPLICATEURS PAR DES ELECTRODES EXTERNESGULGAZARYAN KA; GALOYAN KV; ERANOSYAN GA et al.1973; IZVEST. AKAD. NAUK ARM. S.S.R., TEKH. NAUK; S.S.S.R.; DA. 1973; VOL. 26; NO 6; PP. 32-35; ABS. ARM.; BIBL. 3 REF.Article

INEXPENSIVE DEVICE FOR THE DETERMINATION OF PHOTOMULTIPLIER CURRENT GAINS.BOWER NW; INGLE JD JR.1975; ANAL. CHEM.; U.S.A.; DA. 1975; VOL. 47; NO 12; PP. 2069-2072; BIBL. 14 REF.Article

PHOTOCURRENTS AND PHOTOCONDUCTIVE YIELD IN MOS STRUCTURES DURING X IRRADIATION.FARMER JW; LEE RS.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 6; PP. 2710-2715; BIBL. 13 REF.Article

METHODE DE COMMANDE DU PHOTOCOURANT DES P.M. AVEC DES DYNODES EN JALOUSIESGULGAZARYAN KA.1974; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1974; NO 2; PP. 177-178; BIBL. 2 REF.Article

CARACTERISTIQUES PHOTOELECTRIQUES DES STRUCTURES P-PI -NU -N A BASE DE GAAS(FE)VILISOV AA; GAMAN VI; DIAMANT VM et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 625-628; BIBL. 8 REF.Article

TRANSIENT HIGH LEVEL MAJORITY AND MINORITY CARRIER PHOTOCURRENTS IN P-TYPE SILICON SCHOTTKY BARRIER DIODES. II. COMPARISON WITH COMPUTER CALCULATIONS.JANNEY R; SEIBT W; NORDE H et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 645-652; BIBL. 9 REF.Article

PHOTOCURRENT IN FIELD-INDUCED JUNCTIONS.TONG KY; LAM YW.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 422-424; BIBL. 2 REF.Article

TRANSIENT HIGH LEVEL MAJORITY AND MINORITY CARRIER PHOTOCURRENTS IN P-TYPE SILICON SCHOTTKY BARRIER DIODES. I. COMPARISON WITH ANALYTIC THEORY.NORDE H; SEIBT W; JANNEY R et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 653-655; BIBL. 13 REF.Article

A DIGITAL FEEDBACK INTEGRATOR FOR PRECISION PHOTOCURRENT MEASUREMENTS AT HIGH DATA RATES.GABRIEL FC.1975; I.E.E.E. TRANS. INSTRUMENT. MEASUR.; U.S.A.; DA. 1975; VOL. 24; NO 4; PP. 374-378; BIBL. 7 REF.Article

INSTALLATION POUR L'ETUDE DES CARACTERISTIQUES MONOELECTRONIQUES DES PHOTOMULTIPLICATEURSANTONOV VI; KHOLONDYREV SV.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 4; PP. 187-189; BIBL. 2 REF.Article

OPTOELECTRONIC SATURATION BEHAVIOR OF A P-N JUNCTIONPAOLI TL.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 3; PP. 340-346; BIBL. 9 REF.Article

CONCEPTION D'UN TRANSDUCTEUR D'IMPULSIONS DE PHOTOCOURANT PRODUIT PAR UN ANALYSEUR DU CONTENU GRANULOMETRIQUE D'UN CATALYSEURABOULLAEV V EH.1975; IZVEST. AKAD. NAUK AZERBAJDZH. S.S.R., FIZ.-TEKH. MAT. NAUK; S.S.S.R.; DA. 1975; NO 3; PP. 47-52; ABS. AZERB. ANGL.; BIBL. 3 REF.Article

ENHANCED PHOTOCURRENT IN ANTHRACENE CRYSTALS AT 77^OK.CORET A; FORT A.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 2; PP. 145-147; ABS. FR.; BIBL. 10 REF.Article

RELAXATION DU COURANT ET DU COURANT PHOTOELECTRIQUE DE STRUCTURES STRATIFIEES A JONCTIONS PN. STRUCTURES MULTICOUCHES BASEES SUR DES SEMICONDUCTEURS A ZONES ETROITESAGAREV VN; STAFEEV VI.1977; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1977; VOL. 22; NO 11; PP. 2335-2340; BIBL. 7 REF.Article

THEORIE LINEAIRE DES CARACTERISTIQUES FREQUENTIELLES DU REGIME D'INJECTION DE CONTACT MAXIMUM)ZYUGANOV AN; MIKHELASHVILI VM; SVECHNIKOV SV et al.1976; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1976; NO 23; PP. 30-34; BIBL. 12 REF.Article

NEW CHARGE-TRANSFER MECHANISM ACROSS THE INTERFACE BETWEEN SELENIUM AND POLYSTYRENE HEXYLMETHACRYLATEJOSEFOWICZ JY; CHUNG CHING YANG; POPOVIC Z et al.1979; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1979; VOL. 43; NO 12; PP. 886-889; BIBL. 8 REF.Article

RESISTANCE ELECTRIQUE DE TYPE S ET EFFET PHOTOELECTRIQUES DANS DES CRISTAUX INP TYPE N(CU)BERKELIEV A; DURDYEV K; MEREDOV A et al.1977; IZVEST. AKAD. NAUK TURKM. S.S.R., FIZ.-TEKH. KHIM. GEOL. NAUK; S.S.S.R.; DA. 1977; NO 2; PP. 36-39; ABS. TURKM. ANGL.; BIBL. 7 REF.Article

WHITE-LIGHT RESPONSE OF AN M.O.S.T.LAM YW; TONG KY.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 1; PP. 13-14; BIBL. 2 REF.Article

MESUREUR DE LA CONSTANTE DE TEMPS DE RELAXATION DU PHOTOCOURANTZYKOV VM; YUNDA NT.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 3; PP. 138-139; BIBL. 3 REF.Article