Dystem to phase lock a self-scanning photodiode array to an external signalHARVEY, K. C; LEA, P.W; MORRIS, J. E et al.Review of scientific instruments. 1992, Vol 63, Num 3, pp 1991-1998, issn 0034-6748Article

Understanding the ABCs of detector selection : Optoelectronics world: DetectorsHERGERT, E.Laser focus world. 1999, Vol 35, Num 3, pp S5-S8, issn 1043-8092Article

Linear avalanche photodiode arrays with enhanced blue sensitivityBOSLAU, O; VON MÜNCH, W.Sensors and actuators. A, Physical. 1991, Vol 29, Num 3, pp 179-183, issn 0924-4247Article

Evaluation of a linear self-scanned photodiode array detector for direct direction of 6-8 keV X-raysHA, Z. N.-C; GRUNER, S. M.Analytical instrumentation. 1989, Vol 18, Num 3-4, pp 197-212, issn 0743-5797Article

Change in the photodiode reflectance when the «oxide bias» is applied during the self-calibration procedureVERDEBOUT, J.Journal of physics. E. Scientific instruments. 1983, Vol 16, Num 6, pp 522-525, issn 0022-3735Article

Low noise optical receiver using Si APDLAFORCE, Frederic.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7212, issn 0277-786X, isbn 978-0-8194-7458-2, 721210.1-721210.12Conference Paper

Linear variable filters match photodiode arraysSEDDON, R. I; RESSO, M. J; SWABY, B. L et al.Laser focus world. 1991, Vol 27, Num 9, pp 105-112, issn 1043-8092, 5 p.Article

THERMAL BACKGROUND SUBTRACTION IN PHOTODIODE DETECTORSPERCIVAL JW; NORDSIECK KH.1980; PUBL. ASTRON. SOC. PAC.; ISSN 0004-6280; USA; DA. 1980; VOL. 92; NO 547; PP. 362-367; BIBL. 7 REF.Article

Metal-diamond semiconductor interface and photodiode applicationKOIDE, Yasuo.Applied surface science. 2008, Vol 254, Num 19, pp 6268-6272, issn 0169-4332, 5 p.Conference Paper

Fast field sensing with photodiode arraysHEERING, W; BRANDENBUSCH, M.Sensors and actuators. A, Physical. 1991, Vol 25, Num 1-3, pp 161-166Article

Nouveau système de détection de l'ultraviolet au proche infrarouge à très bas niveau et son application possible à l'identification de composants chimiques dans des solutions très diluées ou des échantillons microscopiques = New system for very low level ultraviolet detection near infrared and its possible application for identifying chemical elements in very diluted solutions or microscopic samplesDA SILVA, Edouard.1983, 24 p.Report

Optical control of microwave circuits using photodiodesMALYSHEV, Sergei; CHIZH, Alexander.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59480R.1-59480R.10, issn 0277-786X, isbn 0-8194-5955-0, 2VolConference Paper

The photodiode is the workhorse of detectionLERNER, Eric J.Laser focus world. 2001, Vol 37, Num 11, pp 133-138, issn 1043-8092, 4 p.Article

A photodiode-array-based near-infrared spectrophotometer for the 600-1100 nm wavelength regionMAYES, D. M; CALLIS, J. B.Applied spectroscopy. 1989, Vol 43, Num 1, pp 27-32, issn 0003-7028, 6 p.Article

Tunable single frequency operation of a diode laser pumped Nd:YAG microchip at 1.3 μmZHOU, F; FERGUSON, A. I.Electronics Letters. 1990, Vol 26, Num 7, pp 490-491, issn 0013-5194Article

Theory of the GaAs-doped p-i-n quantum well APDBRENNAN, K. F; VETTERLING, W. T.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 9, pp 1597-1601, issn 0018-9383, 5 p., 1Article

Light-activated silicon diode switchesGIORGI, D; YU, P. K. L; LONG, J. R et al.Journal of applied physics. 1988, Vol 63, Num 3, pp 930-933, issn 0021-8979Article

The theory, fabrication and assessment of ultra high spedd photodiodesPARKER, D. G.GEC journal of research. 1988, Vol 6, Num 2, pp 106-117, issn 0264-9187Article

Narrow gap semiconductor photodiodesROGALSKI, A; RAZEGHI, M.SPIE proceedings series. 1998, pp 2-13, isbn 0-8194-2726-8Conference Paper

Screening and qualification of discrete silicon photo-devicesSESHAMANI, R; ISLAM, R; SAHA, I et al.SPIE proceedings series. 1998, pp 676-681, isbn 0-8194-2756-X, 2VolConference Paper

Automatic compensation for the temperature coefficient of a photodiode in short-circuit mode = Emploi d'une photodiode comme capteur de températureNIHTIANOV, S. N; ALIPIEV, D. P.Sensors and actuators. A, Physical. 1991, Vol 29, Num 2, pp 117-120, issn 0924-4247Article

Transients in p⁺π⁺ photodiodesGRUMMT, G; TOUSEK, J; TRYZNA, B et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 687-695, issn 0031-8965Article

Two-color amorphous silicon photodiode for multi-color detection of labeled DNACAPUTO, D; DE CESARE, G; NASCETTI, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65920C.1-65920C.7, issn 0277-786X, isbn 978-0-8194-6720-1, 1VolConference Paper

Fonction de transfert optique de photodiodes en IR avec une structure de bandes de KaneTURINOV, V. I.Optika i spektroskopiâ. 1989, Vol 66, Num 4, pp 868-873, issn 0030-4034Article

Analysis of anomalous I-V characteristics of silicon p⁺-n-n⁺ photodiodes fabricated by boron implant through SiO₂ layersSILARD, A. P.International journal of electronics. 1989, Vol 66, Num 2, pp 247-261, issn 0020-7217, 15 p.Article