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Identification of generation-recombination centers and traps in virgin and Fowler-Nordheim stressed metal-oxide-semiconductor field-effect transistors by low temperature charge pumping techniqueJEN-TAI HSU; VISWANATHAN, C. R.Japanese journal of applied physics. 1994, Vol 33, Num 1B, pp 683-687, issn 0021-4922, 1Conference Paper

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