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Effect of Auger recombination on laser operation in Ga1-xAlxAsTAKESHIMA, M.Journal of applied physics. 1985, Vol 58, Num 10, pp 3846-3850, issn 0021-8979Article

Auger recombination in a quantum-well-heterostructure laserTAYLOR, R. I; ABRAM, R. A; BURT, M. G et al.IEE proceedings. Part J. Optoelectronics. 1985, Vol 132, Num 6, pp 364-370, issn 0267-3932Article

Radiative efficiency in low-dimensional semiconductor structuresBURT, M. G; TAYLOR, R. I.Electronics Letters. 1985, Vol 21, Num 17, pp 733-734, issn 0013-5194Article

Auger recombination in long-wavelength quantum-well lasersSMITH, C; ABRAM, R. A; BURT, M. G et al.Electronics Letters. 1984, Vol 20, Num 21, pp 893-894, issn 0013-5194Article

Auger recombination rate in quantum well lasers: modification by electron-electron interaction in quasi two dimensionsBASU, P. K.Journal of applied physics. 1984, Vol 56, Num 11, pp 3344-3346, issn 0021-8979Article

Recombinaison Auger interbande dans des structures laser en GaSbGEL'MONT, B. L; SOKOLOVA, Z. N; KHALFIN, V. B et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 10, pp 1803-1807, issn 0015-3222Article

Simulation studies of the dynamic behavior of semiconductor lasers with Auger recombinationMING TANG; SHYH WANG.Applied physics letters. 1987, Vol 50, Num 26, pp 1861-1863, issn 0003-6951Article

RECOMBINAISON AUGER DANS LES SEMICONDUCTEURS DE TYPE P A BANDE ETROITEGEL'MONT BL.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1316-1319; BIBL. 7 REF.Article

BAND-TO-BAND AUGER RECOMBINATION IN INGAASP LASERSSUGIMURA A.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 21-23; BIBL. 30 REF.Article

Theory and modeling of type-II strained-layer superlattice detectorsFLATTE, Michael E; GREIN, Christoph H.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7222, issn 0277-786X, isbn 978-0-8194-7468-1 0-8194-7468-1, 1Vol, 72220Q.1-72220Q.9Conference Paper

Beyond the ABC : Carrier recombinations in semiconductor lasersHADER, J; MOLONEY, J. V; KOCH, S. W et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61151T.1-61151T.7, issn 0277-786X, isbn 0-8194-6157-1, 1VolConference Paper

Theoretical prediction of the impact of Auger recombination on charge collection from an ion trackEDMONDS, L. D.IEEE transactions on nuclear science. 1991, Vol 38, Num 5, pp 999-1004, issn 0018-9499Article

Novel bandgap grading technique for enhancing the limiting efficiency of solar cellsHABIB, S. E.-D; RAFAT, N. H.Renewable energy. 1997, Vol 10, Num 2-3, pp 129-134, issn 0960-1481Conference Paper

Intervalence-band absorption in relation to Auger recombination in laser materialsTAKESHIMA, M.Japanese journal of applied physics. 1984, Vol 23, Num 4, pp 428-435, issn 0021-4922, 1Article

AUGER RECOMBINATION RATE IN INGAASP LASERSBURT MG.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 806-807; BIBL. 12 REF.Article

THEORY OF PHONON-ASSISTED AUGER RECOMBINATION IN SEMICONDUCTORSTAKESHIMA M.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 12; PP. 6625-6637; BIBL. 20 REF.Article

ESTIMATION OF SECOND-ORDER AUGER RECOMBINATION IN LEAD CHALCOGENIDESZIEP O.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 1; PP. 161-170; ABS. GER; BIBL. 20 REF.Article

THE EQUIVALENCE OF TWO RECENT AUGER RECOMBINATION RATE CALCULATIONSROBBINS DJ; YOUNG A.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 102; NO 2; PP. K143-K147; BIBL. 5 REF.Article

RECOMBINAISON AUGER DANS LE GERMANIUMAKULINICHEV VV.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 6; PP. 1197-1200; BIBL. 7 REF.Article

INTERBAND AUGER RECOMBINATION IN INGAASPCHIU LC; CHEN PC; YARIV A et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 6; PP. 938-941; BIBL. 20 REF.Article

EVIDENCES FOR AUGER RECOMBINATION IN ELECTRON-HOLE DROPLETS (SILICON).BARRAU J; BRABANT JC; BROUSSEAU M et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 9; PP. 1079-1082; BIBL. 8 REF.Article

ON DETAILED BALANCE BETWEEN AUGER RECOMBINATION AND IMPACT IONIZATION IN SEMICONDUCTORSLANDSBERG PT.1972; PROC. R. SOC. LONDON, A; G.B.; DA. 1972; VOL. 331; NO 1584; PP. 103-108; BIBL. 9 REF.Serial Issue

AUGER RECOMBINATION IN A QUANTUM WELL HETEROSTRUCTURESMITH C; ABRAM RA; BURT MG et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 5; PP. L171-L175; BIBL. 8 REF.Article

EFFECTS OF AUGER RECOMBINATION PROCESS ON LASER DYNAMICSOTSUKA K; KUBODERA K.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 5; PP. 538-541; BIBL. 8 REF.Article

CARACTERISTIQUES PHOTOELECTRIQUES ET DE RECOMBINAISON D'UN PHOTOMELANGEUR A BASE DE CDHGTELILENKO YU V.1980; IZV. VYSS. UCEBN. ZAVED., FIZ.; ISSN 0021-3411; SUN; DA. 1980; VOL. 23; NO 7; PP. 100-103; BIBL. 7 REF.Article

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