SELF-ALIGNED SUBMICRON GATE DIGITAL GAAS INTEGRATED CIRCUITSLEVY HM; LEE RE.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 4; PP. 102-104; BIBL. 6 REF.Article

DRY ETCHING AIDS IN REALIZATION OF VLS/SMITO H.1981; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1981; VOL. 18; NO 177; PP. 81-86Article

A 32-BIT VLSI CPU CHIPBEYERS JW; DOHSE LJ; FUCETOLA JP et al.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 5; PP. 537-542; BIBL. 3 REF.Article

MIX-AND-MATCH OF 10: 1 WAFER STEPPERS WITH DIE-BY-DIE ALIGNMENT TO 1:1 PROXIMITY AND PROJECTION SYSTEMSSTOVER HL; DAVID NE; LEWIS TH et al.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 10; PP. 124-132; BIBL. 5 REF.Article

ELECTRON BEAM LITHOGRAPHY MOVING INTO FOCUSFUKATSU Y; SAKIYAMA T.1981; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1981; VOL. 18; NO 177; PP. 92-95; BIBL. 4 REF.Article

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A NEW SELF-ALIGNING POLY-CONTACT TECHNOLOGY FOR MOS LSIKUNINOBU S.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 8; PP. 1309-1313; BIBL. 5 REF.Article

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A NEW MOS INTEGRATED CIRCUIT FABRICATION USING SI₃N₄ FILM SELF-ALIGNMENT LIFTOFF TECHNIQUESYACHI T; YAMAUCHI N.1982; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 243-247; BIBL. 11 REF.Article

A 3-NS 1-KBIT RAM USING SUPER SELF-ALIGNED PROCESS TECHNOLOGYSAKAI T; YAMAMOTO Y; KOBAYASHI Y et al.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 5; PP. 424-429; BIBL. 9 REF.Article

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A 400 PS BIPOLAR 18 BIT RALU USING ADVANCED PSASATO F; WAKAMATSU S; KUBOTA T et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 802-808; BIBL. 12 REF.Article

AN ADVANCED PSA TECHNOLOGY FOR HIGH-SPEED BIPOLAR LSINAKASHIBA H; ISHIDA I; AOMURA K et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 455-459; BIBL. 8 REF.Article

DSA MOS TRANSITOR AND ITS INTEGRATED CIRCUIT.HAYASHI Y; SEKIGAWA T; TARUI Y et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 163-166; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

FILM PROPERTIES OF MOSI₂ AND THEIR APPLICATION TO SELF-ALIGNED MOSI₂ GATE MOSFETMOCHIZUKI T; TSUJIMARU T; KASHIWAGI M et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 496-500; BIBL. 13 REF.Article

FULLY ION IMPLANTED DSA MOSIC.OHKURA I; OHMORI M; SHIMOTORI K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 167-171; BIBL. 11 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

SWITCH-ON BEHAVIOUR OF MOS TRANSISTORS.BIERHENKE H; HERBST H.1977; ELECTRON. ENGNG; G.B.; DA. 1977; VOL. 49; NO 600; PP. 69-70Article

1.25 MU M DEEP-GROOVE-ISOLATED SELF-ALIGNED BIPOLAR CIRCUITSTANG DD; SOLOMON PM; NING TH et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 5; PP. 925-931; BIBL. 24 REF.Article

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QUADRUPLY SELF-ALIGNED MOS (QSA MOS) - A NEW SHORT-CHANNEL HIGH-SPEED HIGH-DENSITY MOSFET FOR VLSIOHTA K; YAMADA K; SAITOH M et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 417-423; BIBL. 22 REF.Article

PROCEDE IMPLANTE AUTOALIGNEDE BREBISSON M; TESSIER M.1980; ; FRA; DA. 1980; DGRST-77 7 0979; 25 P.: ILL.; 30 CM; BIBL. 3 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

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MOS DEVICE FABRICATION USING X-RAY LITHOGRAPHYSUZUKI K; MATSUI J; ONO T et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 11; PP. 2434-2437; BIBL. 11 REF.Article

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