CHEMICAL VAPOR DEPOSITION IN THE SYSTEMS SILICON-CARBON AND SILICON-CARBON-NITROGEN.NICKL JJ; VON BRAUNMUHL C.1974; J. LESS-COMMON METALS; NETHERL.; DA. 1974; VOL. 37; NO 3; PP. 317-329; ABS. ALLEM.; BIBL. 14 REF.Article

PRODUITS REFRACTAIRES DE CARBURE DE SILICIUM A LIANT COMPLEXE CONTENANT DU NITRURE ET OXYNITRURE DE SILICIUMDRAGOMIR C; OPREA G; RUSU E et al.1975; CERC. METALURG.; ROMAN.; DA. 1975; VOL. 16; PP. 665-671; ABS. ANGL. ALLEM. FR. RUSSE; BIBL. 16 REF.Article

RELATIONSHIP BETWEEN COMPOSITION AND GLASS TRANSITION TEMPERATURE IN NA₂O-M₂O₃-SIO₂ GLASSES (M=GA, IN, SC. Y, LA)BURI A; CAFERRA D; BRANDA F et al.1982; PHYS. CHEM. GLASSES; ISSN 0031-9090; GBR; DA. 1982; VOL. 23; NO 1; PP. 37-40; BIBL. 14 REF.Article

PIC K D'ABSORPTION DU SILICIUM DANS LE SILICIUM CRISTALLIN ET LES OXYDE, CARBURE ET NITRURE DE SILICIUMSOKOLENKO VI; ZHURAKOVSKIJ EA; SOKOLENKO AI et al.1979; DOKL. AKAD. NAUK UKR. S.S.R., A; UKR; DA. 1979; NO 3; PP. 209-211; ABS. ENG; BIBL. 3 REF.Article

SILICON OXYNITRIDE. A NEW CERAMIC MATERIAL FOR NUCLEAR APPLICATIONSKEILHOLTZ GW; MOORE RE.1972; NUCL. TECHNOL.; U.S.A.; DA. 1972; VOL. 16; NO 3; PP. 566-567; BIBL. 3 REF.Serial Issue

INFLUENCE DES ELEMENTS D'ALLIAGE DES ACIERS SUR LE COMPORTEMENT A LA TRANSFORMATION DE LA ZONE THERMIQUEMENT AFFECTEE SIMULEE. IIKASUGAI T; INAGAKI M.1975; J. JAP. WELDG SOC.; JAP.; DA. 1975; VOL. 44; NO 2; PP. 136-143; ABS. ANGL.; BIBL. 10 REF.Article

IMPLANTATION OF ARGON INTO SIO₂ FILMS DUE TO BACKSPUTTER CLEANING.KOCH FB; MEEK RL; MCCAUGHAN DV et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 4; PP. 558-562; BIBL. 16 REF.Article

ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-SILICON NITRIDE-SILICON DIOXYDE-SILICON STRUCTURESMAEKAWA M.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 9; PP. 1251-1258; BIBL. 29 REF.Serial Issue

LASER PHOTOELECTRON SPECTROMETRY OF THE NEGATIVE IONS OF SILICON AND ITS HYDRIDES.KASDAN A; HERBST E; LINEBERGER WC et al.1975; J. CHEM. PHYS.; U.S.A.; DA. 1975; VOL. 62; NO 2; PP. 541-548; BIBL. 41 REF.Article

ETUDE DES SYSTEMES METAL-DIELECTRIQUE-SEMICONDUCTEUR A DOUBLE COUCHE DE DIELECTRIQUECOLOMBIER M; JUND C; KERVELLA B et al.1972; DGRST-71 7 2669; FR.; DA. 1972; PP. 1-69; H.T. 38; BIBL. 1 P.; (RAPP. FINAL, ACTION CONCERTEE: PHYS. ELECTRON.)Report

RESISTANCE ELECTRIQUE DES ALLIAGES DU SYSTEME CO-SIKORSHIK YU G; MAMEDOV MM.1974; IZVEST. AKAD. NAUK TURKM. S.S.R., FIZ.-TEKH. KHIM. GEOL. NAUK; S.S.S.R.; DA. 1974; NO 2; PP. 106-108; BIBL. 3 REF.Article

REACTIONS ENTRE LE MONOXYDE DE SILICIUM ET LE CARBONEKOZHEVNIKOV GN; VODOP'YANOV AG; CHUFAROV GI et al.1972; IZVEST. AKAD. NAUK S.S.S.R., METALLY; S.S.S.R.; DA. 1972; NO 4; PP. 82-85; BIBL. 11 REF.Serial Issue

NITROGEN GLASSESDREW RAL; HAMPSHIRE S; JACK KH et al.1981; PROC. BR. CERAM. SOC.; ISSN 0524-5141; GBR; DA. 1981; NO 31; PP. 119-132; BIBL. 22 REF.Conference Paper

NEUTRON DIFFRACTION BY FLEXURAL VIBRATING SINGLE CRYSTALS OF SI, GE AND SIO₂ IN BRAGG CASE.MICHALEC R; SEDLAKOVA L; CHALUPA B et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 23; NO 2; PP. 667-673; ABS. ALLEM.; BIBL. 9 REF.Article

BESTIMMUNG DER PINHOLE-DICHTE VON ISOLATORSCHICHTEN DURCH CHEMISCHES AETZEN (I). DAS SYSTEM SILIZIUM-SILIZIUMDIOXID. = DETERMINATION PAR ATTAQUE CHIMIQUE DE LA DENSITE DES "TROUS D'EPINGLES" DANS DES COUCHES ISOLANTES (I). LE SYSTEME SILICIUM-DIOXYDE DE SILICIUMTHIEMT K; KALTOFEN R.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 3; PP. 305-312; ABS. ANGL.; BIBL. 17 REF.Article

UNSTABLE SILICON ANALOGS OF UNSATURATED COMPOUNDSGUSEL'NIKOV LE; NAMETKIN NS; VDOVIN VM et al.1975; ACCOUNTS CHEM. RES.; U.S.A.; DA. 1975; VOL. 8; NO 1; PP. 18-25; BIBL. 78 REF.Article

SOME PRACTICAL REMARKS ON THE DESIGN OF EXPERIMENTAL SYSTEMS FOR EPITAXIAL GROWTH OF SI, GE AND SI-GE.AHARONI H; BAR LEV A.1974; VACUUM; G.B.; DA. 1974; VOL. 24; NO 2; PP. 89-93; BIBL. 7 REF.Article

SILICON DIOXIDE MASKING OF PHOSPHORUS DIFFUSION IN SILICON.GHOSHTAGORE RN.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 5; PP. 399-406; BIBL. 13 REF.Article

PRODUCTION DE FERROSILICIUMRUKAVISHNIKOV NV; SEMENOV VE; DRUINSKIJ MI et al.1973; STAL; S.S.S.R.; DA. 1973; NO 2; PP. 133-134; BIBL. 4 REF.Serial Issue

HIGH-FLUENCE IRRADIATION-INDUCED DIMENSIONAL CHANGES OF CO-DEPOSITED CARBON-SILICON ALLOYSKAAE JL; STEVENS DW; BOKROS JC et al.1972; CARBON; G.B.; DA. 1972; VOL. 10; NO 3; PP. 285-292; BIBL. 10 REF.Serial Issue

THERMAL STABILITY AND CRYSTALLIZATION BEHAVIOUR OF AMORPHOUS ZR-M-SI (M=IV-VIII GROUP TRANSITION METALS) ALLOYSINOUE A; TAKAHASHI Y; SURYANARAYANA C et al.1982; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1982; VOL. 17; NO 11; PP. 3253-3262; BIBL. 23 REF.Article

PREPARATION OF (SUBSTITUTED) 3,3-DIMETHYL-3-SILA-1-HETEROCYCLOHEXANESDEDEYNE R; ANTEUNIS MJO.1976; BULL. SOC. CHIM. BELGES; BELG.; DA. 1976; VOL. 85; NO 5; PP. 319-331; BIBL. 21 REF.Article

LOW PRESSURE CVD PRODUCTION PROCESSES FOR POLY, NITRIDE, AND OXIDE.ROSLER RS.1977; SOLID STATE TECHNOL.; U.S.A.; DA. 1977; VOL. 20; NO 4; PP. 63-70; BIBL. 6 REF.Article

CONTRAINTES D'UN SYSTEME SEMICONDUCTEUR-COUCHE DE SIO₂ OU SIC LORS DU DEPOT DES COUCHES PAR LES METHODES EN PHASE VAPEURZHAGATA LA; KALNACH YA V; NEJMANE IP et al.1974; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1974; NO 4; PP. 33-41; ABS. ANGL.; BIBL. 14 REF.Article

THE INTERACTION OF SILICON MONOXIDE GAS WITH CARBONACEOUS REDUCING AGENTSPAULL JM; SEE JB.1978; J. S. AFR. INST. MING METALLURGY; ZAF; DA. 1978; VOL. 79; NO 2; PP. 35-41; ABS. AFR; BIBL. 10 REF.Article