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Optical spectra of quantum dot aggregates in the sub-wetting layer regionKRAL, Karel; ZDENEK, Petr.Microelectronic engineering. 2003, Vol 69, Num 2-4, pp 256-260, issn 0167-9317, 5 p.Conference Paper

Two-dimensional near-field optical spectroscopy in magnetic fields up to 4 TTANAKA, Kenichiro; TSUKAGOSHI, Kazuhito; AOYAGI, Yoshinobu et al.Optical review. 2006, Vol 13, Num 4, pp 276-278, issn 1340-6000, 3 p.Conference Paper

Observation of Overhauser shift in a self-assembled InAlAs quantum dotYOKOI, T; ADACHI, S; MUTO, S et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 29, Num 3-4, pp 510-514, issn 1386-9477, 5 p.Conference Paper

Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor depositionLEE, S. W; CHEN, P. S; CHENG, S. L et al.Applied surface science. 2008, Vol 254, Num 19, pp 6261-6264, issn 0169-4332, 4 p.Conference Paper

Role of electron-hole symmetry in the strength of polarization emission spectra of multiexcitonsHWANG, N. Y; YANG, S.-R. Eric.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 5, pp 1154-1156, issn 1386-9477, 3 p.Conference Paper

Electroluminescence of single-dot nano-LEDs-optical spectroscopy of an electrically tunable few-electron/hole systemSCHMIDT, R; VITZETHUM, M; STUFLER, S et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 26, Num 1-4, pp 110-114, issn 1386-9477, 5 p.Conference Paper

Polaronic states in II-VI quantum dotTRIKI, M; JAZIRI, S.Applied surface science. 2004, Vol 238, Num 1-4, pp 213-217, issn 0169-4332, 5 p.Conference Paper

Generation of non-classical light by single quantum dotsROBERT-PHILIP, I; MOREAU, E; VAROUTSIS, S et al.Journal of luminescence. 2003, Vol 102-03, pp 67-71, issn 0022-2313, 5 p.Conference Paper

Polarization dependence of emission spectra of multiexcitons in self-assembled quantum dotsHWANG, N. Y; YANG, S.-R. Eric.Solid state communications. 2007, Vol 143, Num 3, pp 176-181, issn 0038-1098, 6 p.Article

Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatmentsLEE, S. W; CHEN, L. J; CHEN, P. S et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 152-155, issn 0169-4332, 4 p.Conference Paper

Formation and Characterization of 1.5-Monolayer Self-Assembled InAs/GaAs Quantum Dots Using Postgrowth AnnealingHUANG, Chun-Yuan; OU, Tzu-Min; CHOU, Shu-Ting et al.IEEE transactions on nanotechnology. 2007, Vol 6, Num 6, pp 589-594, issn 1536-125X, 6 p.Article

THE EFFECT OF THIN GAP INSERTION LAYER ON INP NANOSTRUCTURE GROWN BY METAL―ORGANIC VAPOUR PHASE EPITAXYSOE SOE HAN; PANYAKEOW, Somsak; RATANATHAMMAPHAN, Somchai et al.Canadian journal of chemical engineering. 2012, Vol 90, Num 4, pp 915-918, issn 0008-4034, 4 p.Conference Paper

Abnormal temperature behavior of photoluminescence in CdSe/ZnSe self-assembled quantum dotsJINJU ZHENG; ZHUHONG ZHENG; WEIWEI GONG et al.Solid state communications. 2008, Vol 147, Num 11-12, pp 429-432, issn 0038-1098, 4 p.Article

Temperature dependence of the electron distribution in a GaAs matrix with embedded inas quantum dotsCHIQUITO, Adenilson J; DE SOUZA, Marcelo G.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 25, Num 4, pp 613-618, issn 1386-9477, 6 p.Article

Reading the footprints of strained islandsRASTELLI, A; STOFFEL, M; SCHMIDT, O. G et al.Microelectronics journal. 2006, Vol 37, Num 12, pp 1471-1476, issn 0959-8324, 6 p.Conference Paper

Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopySHUWEI LI; KOIKE, Kazuto; YANO, Mitsuaki et al.Physica. B, Condensed matter. 2003, Vol 325, Num 1-4, pp 41-45, issn 0921-4526, 5 p.Article

Photoluminescence investigation of low-temperature capped self-assembled InAs/GaAs quantum dotsSONGMUANG, R; KIRAVITTAYA, S; SAWADSARINGKARN, M et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 166-171, issn 0022-0248, 6 p.Conference Paper

Influence of bimodal distribution and excited state emission on photoluminescence spectra of InAs self-assembled quantum dotsFRANCHELLO, Flavio; DE SOUZA, Leonardo D; LAURETO, Edson et al.Journal of luminescence. 2013, Vol 137, pp 22-27, issn 0022-2313, 6 p.Article

Fabrication and characterization of a vertical pillar structure including a self-assembled quantum dot and a quantum wellKODERA, Tetsuo; ONO, Keiji; KUMAGAI, Naoto et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2592-2594, issn 1386-9477, 3 p.Conference Paper

Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge virtual substrates on SiFRIGERI, C; BIETTI, S; ISELLA, G et al.Applied surface science. 2013, Vol 267, pp 86-89, issn 0169-4332, 4 p.Article

Field-emission properties of self-assembled Si-capped Ge quantum dotsLEE, S. W; CHUEH, Y. L; CHEN, H. C et al.Thin solid films. 2006, Vol 508, Num 1-2, pp 218-221, issn 0040-6090, 4 p.Conference Paper

Formation of Ge self-assembled quantum dots on a SixGe1-x buffer layerKIM, Hyungjun; SHIN, Chansun; CHANG, Joonyeon et al.Applied surface science. 2005, Vol 252, Num 5, pp 1476-1480, issn 0169-4332, 5 p.Article

PL characteristics of InAs quantum dots with Sb irradiation in growth interruptionMATSUURA, T; MIYAMOTO, T; OHTA, M et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 51-56, issn 0022-0248, 6 p.Conference Paper

Effects of size and shape on electronic states of quantum dotsCHUN YONG NGO; SOON FATT YOON; WEIJUN FAN et al.Optical and quantum electronics. 2006, Vol 38, Num 12-14, pp 981-991, issn 0306-8919, 11 p.Conference Paper

Growth and temperature dependent photoluminescence of InGaAs quantum dot chainsHAEYEON YANG; KIM, Dong-Jun; COLTON, John S et al.Applied surface science. 2014, Vol 296, pp 8-14, issn 0169-4332, 7 p.Article

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