EFFECTS OF THE CURRENT DISTRIBUTION ON THE CHARACTERISTICS OF THE SEMICONDUCTOR LASER WITH A CHANNELED-SUBSTRATE PLANAR STRUCTURECHUNG YIH CHEN; SHYH WANG.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 614-620; BIBL. 23 REF.Article

ABOVE-THRESHOLD ANALYSIS OF CHANNELLED-SUBSTRATE-PLANAR (CSP) LASERSHORE KA.1981; IEE PROC., PART I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 1; PP. 9-15; BIBL. 13 REF.Article

A PLANAR SINGLE-SUBSTRATE AC PLASMA DISPLAY.DICK GW; BIAZZO MR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 429-437; BIBL. 12 REF.Article

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PLANAR GUNN-EFFECT LOGIC DEVICE WITH TWO SEPARATED CATHODES.MASUDA M; NISHIDA M; KIMURA M et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 15; PP. 320-321; BIBL. 4 REF.Article

MODERNE SI-FOTOEMPFOENGERANORDNUNGEN UND IHRE ANSTEUERUNG. = CONFIGURATIONS DE PHOTORECEPTEURS A SI MODERNES ET LEUR COMMANDESCHMIDT D; STOCKEL KG; UHLMANN L et al.1975; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1975; VOL. 24; NO 20; PP. 673-676; BIBL. 7 REF.Article

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MAGNETIC SENSITIVITY OF A DISTRIBUTED SI PLANAR PNPN STRUCTURE SUPPORTING A CONTROLLED CURRENT FILAMENT.BARTELINK DJ; PERSKY G.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 10; PP. 590-592; BIBL. 4 REF.Article

FEEDBACK-INDUCED LINE BROADENNING IN CW CHANNAL-SUBSTRATE PLANAR LASER DIODESMILES RO; DANDRIDGE A; TVETEN AB et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 11; PP. 990-992; BIBL. 14 REF.Article

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LA METROLOGIE DIMENSIONNELLE EN MICROELECTRONIQUELACOMBAT M.1981; REV. TECH. THOMSON-CSF; ISSN 0035-4279; FRA; DA. 1981; VOL. 13; NO 3; PP. 577-597; ABS. ENG; BIBL. 26 REF.Article

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MULTIPHASE OSCILLATOR AND MULTIVIBRATOR USING IMPROVED UNIJUNCTION TRANSISTORS. = OSCILLATEUR MULTIPHASE ET MULTIVIBRATEUR UTILISANT DES TRANSISTORS UNIJONCTIONS AMELIORESDAIKOKU K; TAMAMA T.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 24; PP. 522-523; BIBL. 3 REF.Article

TRIAC PLANAR A GRANDE SENSIBILITE.SENES A.1974; DGRST-7270527; FR.; DA. 1974; PP. 1-33; BIBL. 2 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES - DISPOSITIFS)Report

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METODI LITOGRAFICI PER LA TECNOLOGIA PLANARE. II. LITOGRAFIA ELETTRONICA A SCANSIONE, RUOLO DELLE VARIE TECNICHE LITOGRAFICHE. = METHODES LITHOGRAPHIQUES POUR LA TECHNOLOGIE PLANAIRE. LITHOGRAPHIE ELECTRONIQUE A BALAYAGE, ROLE DES DIVERSES TECHNIQUES LITHOGRAPHIQUESARMIGLIATO A; COCITO M; MERLI PG et al.1977; ELETTRON. E TELECOMMUNIC.; ITAL.; DA. 1977; VOL. 26; NO 3; PP. 107-122; ABS. ANGL.; BIBL. 27 REF.Article

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NARROW DOUBLE-CURRENT-CONFINEMENT CHANNELED-SUBSTRATE PLANAR LASER FABRICATED BY DOUBLE ETCHING TECHNIQUECHUNG YIH CHEN; SHYH WANG.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 634-636; BIBL. 12 REF.Article