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Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devicesSEVERI, S; ANIL, K. G; CAMILLE-CASTILLO, R. A et al.International Electron Devices Meeting. 2004, pp 99-102, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectricsTSUJIKAWA, Shimpei; YUGAMI, Jiro.Microelectronics and reliability. 2005, Vol 45, Num 1, pp 65-69, issn 0026-2714, 5 p.Article

A PMOSFET ESD failure caused by localized charge injectionCHUN, Jung-Hoon; DUVVURY, Charvaka; BOSELLI, Gianluca et al.IEEE international reliability physics symposium. 2004, pp 405-411, isbn 0-7803-8315-X, 1Vol, 7 p.Conference Paper

Process dependence of negative bias temperature instability in PMOSFETSPRASAD, Sharad; ERHONG LI; DUONG, Lesly et al.Proceedings - Electrochemical Society. 2003, pp 211-216, issn 0161-6374, isbn 1-56677-347-4, 6 p.Conference Paper

Characterization of the effective mobility by split C(V) technique in sub 0.1 μm Si and SiGe PMOSFETsROMANJEK, K; ANDRIEU, F; ERNST, T et al.Solid-state electronics. 2005, Vol 49, Num 5, pp 721-726, issn 0038-1101, 6 p.Article

In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) SiIRIE, H; KITA, K; KYUNO, K et al.International Electron Devices Meeting. 2004, pp 225-228, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Symmetrical 45nm PMOS on (110) substrate with excellent S/D extension distribution and mobility enhancementHWANG, J. R; HO, J. H; LIN, H. S et al.Symposium on VLSI Technology. sd, pp 90-91, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Impact ionisation in strained SiGe pMOSFETsNICHOLAS, G; DOBBIE, A; GRASBY, T. J et al.Electronics Letters. 2005, Vol 41, Num 16, pp 925-927, issn 0013-5194, 3 p.Article

Performance enhancements for 50 nm PMOS by angled pre-amorphization implants and fluorine implantsCHIDAMBARAM, P. R; EKBOTE, S; CHAKRAVARTHI, S et al.Proceedings - Electrochemical Society. 2003, pp 93-98, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

CMOS dual-work-function engineering by using implanted Ni-FUSILIN, Chien-Ting; RAMIN, Manfred; PAS, Michael et al.IEEE electron device letters. 2007, Vol 28, Num 9, pp 831-833, issn 0741-3106, 3 p.Article

Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO₂/Pt and HfO₂/Hf systemsSAYAN, S; BARTYNSKI, R. A; GARFUNKEL, E et al.Proceedings - Electrochemical Society. 2004, pp 255-263, issn 0161-6374, isbn 1-56677-406-3, 9 p.Conference Paper

An input-free NMOS V_T extractor circuit in presence of body effectsSENGUPTA, S.IEEE International Symposium on Circuits and Systems. 2004, pp 912-915, isbn 0-7803-8251-X, 4 p.Conference Paper

Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in pMOS transistorsHUARD, V; DENAIS, M.IEEE international reliability physics symposium. 2004, pp 40-45, isbn 0-7803-8315-X, 1Vol, 6 p.Conference Paper

Understanding stress enhanced performance in intel 90nm CMOS technologyGILES, M. D; ARMSTRONG, M; OBRADOVIC, B et al.Symposium on VLSI Technology. sd, pp 118-119, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Influence of the mechanical strain induced by a metal gate on electron and hole transport in single and double-gate SOI MOSFETsGUILLAUME, T; MOUIS, M; MAITREJEAN, S et al.IEEE international SOI conference. 2004, pp 42-44, isbn 0-7803-8497-0, 1Vol, 3 p.Conference Paper

A study of the linearity between I_on and logI _offof modern MOS transistors and its application to stress engineeringLAU, W. S; PEIZHEN YANG; ENG, C. W et al.Microelectronics and reliability. 2008, Vol 48, Num 4, pp 497-503, issn 0026-2714, 7 p.Article

A Wide Dynamic Range CMOS Image Sensor with an Adjustable Logarithmic ResponseCHENG, Hsiu-Yu; CHOUBEY, Bhaskar; COLLINS, Steve et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 681602.1-681602.8, issn 0277-786X, isbn 978-0-8194-6988-5, 1VolConference Paper

80nm self-aligned complementary I-MOSs using double sidewall spacer and elevated drain structure and its applicability to amplifiers with high linearityWOO YOUNG CHOI; JAE YOUNG SONG; BYUNG YONG CHOI et al.International Electron Devices Meeting. 2004, pp 203-206, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

NBTI effects of pMOSFETs with different nitrogen dose implantationLEE, Y. J; TANG, Y. C; WU, M. H et al.IEEE international reliability physics symposium. 2004, pp 681-682, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

Technology Booster using Strain-Enhancing Laminated SiN (SELS) for 65nm Node HP MPUsGOTO, K; SATOH, S; KATAKAMI, A et al.International Electron Devices Meeting. 2004, pp 209-212, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Optimization of gate poly TAB size and reliability on short channel pMOSFETSEOK, Jung-Eun; KIM, Hyun-Joo; SEO, Jae-Yong et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1185-1188, issn 0026-2714, 4 p.Conference Paper

Dynamic NBTI lifetime model for inverter-like waveformSHYUE SENG TAN; TU PEI CHEN; CHAN, Lap et al.Microelectronics and reliability. 2005, Vol 45, Num 7-8, pp 1115-1118, issn 0026-2714, 4 p.Article

A test chip to characterise P-MOS transistors produced using a novel organometallic materialDICKS, M. H; BROXTON, G. M; THOMSON, J et al.2004 international conference on microelectronic test structures. 2004, pp 183-187, isbn 0-7803-8262-5, 1Vol, 5 p.Conference Paper

Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETsCHEN, William P. N; KUO, Jack J. Y; PIN SU et al.IEEE electron device letters. 2011, Vol 32, Num 2, pp 113-115, issn 0741-3106, 3 p.Article