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Propagation of {110} cleavage cracks in siliconMICHOT, G.Surface science. 1987, Vol 186, Num 3, pp L561-L567, issn 0039-6028Article

Théorie du contraste radiotopographique des microdéfautsPETRASHEN, P. V.Metallofizika (Kiev). 1988, Vol 10, Num 1, pp 18-25, issn 0204-3580Article

Synchrotron X-radiation topographyTANNER, B. K; BOWEN, D. K.Materials science reports. 1992, Vol 8, Num 8, pp 369-407, issn 0920-2307Serial Issue

Angle-sensitive X-ray topographs obtained with kossel linesWITTRY, D. B; SONGQUAN SUN; CHANG, W. Z et al.Journal of applied crystallography. 1991, Vol 24, pp 999-1004, issn 0021-8898, 6Article

Study of rapid growth of KDP crystals by temperature loweringZAITSEVA, N. P; SMOL'SKII, I. L; RASHKOVICH, L. N et al.Soviet physics. Crystallography. 1991, Vol 36, Num 1, pp 113-115, issn 0038-5638Article

X-ray topographic investigation of characteristic dislocation structure in sapphire single crystalsZHANG QIANG; DENG PEIZHEN; GAN FUXI et al.Journal of applied physics. 1990, Vol 67, Num 10, pp 6159-6164, issn 0021-8979Article

Considération des distorsions de la métrique des réflexions dans les clichés de symétrie oblique et moyens de les éliminerBELOTSKAYA, A. A; TIKHONOV, L. V; KHAR'KOVA, G. B et al.Kristallografiâ. 1988, Vol 33, Num 3, pp 584-588, issn 0023-4761Article

Image enhancement of x-ray topographs by Fourier filteringEPELBOIN, Y; MORRIS, F; RIMSKY, A et al.Journal of physics. D, Applied physics (Print). 1993, Vol 26, Num 4A, pp A15-A18, issn 0022-3727Article

Quasi-realtime characterization of microchip wafers using scanning WSR-section topographySTEPHENSON, J. D.Physica status solidi. A. Applied research. 1990, Vol 122, Num 2, pp K121-K122, issn 0031-8965Article

Técnica de topografía de rayos X Berg-Barrett. Características y aplicacionesGUIBERTEAU, F; CUMBRERA, F. L; PEREZ, S et al.Boletín de la Sociedad Española de Cerámica y Vidrio. 1990, Vol 29, Num 6, pp 393-402, issn 0366-3175Article

X-ray topography with a semiconductor TV systemGERMER, R.Physica status solidi. A. Applied research. 1987, Vol 100, Num 1, pp 47-51, issn 0031-8965Article

Détermination par topographie de rayons X des signes des dislocations interfacialesARGUNOVA, T. S; RUBIMOV, S. S; SHUL'PINA, I. L et al.Fizika tverdogo tela. 1986, Vol 28, Num 4, pp 1052-1057, issn 0367-3294Article

Visibilité anormale de dislocations interfaciales sur des topogrammes de rayons X en géométrie de BraggARGUNOVA, T. S; GUTKIN, M. YU; ROMANOV, A. E et al.Fizika tverdogo tela. 1986, Vol 28, Num 2, pp 581-583, issn 0367-3294Article

Contrasting the 0.3 μm depth carrier concentration with dislocation density in a Si-implanted layerSAITO, Y.Materials letters (General ed.). 1992, Vol 13, Num 1, pp 40-46, issn 0167-577XArticle

RTK 2 ― a double-crystal x-ray topographic camera applying new principlesJENICHEN, B; KÖHLER, R; MÖHLING, W et al.Journal of physics. E. Scientific instruments. 1988, Vol 21, Num 11, pp 1062-1066, issn 0022-3735Article

Representation of simulated X-ray topographs by means of the FEAG 200 deviceHÄRTWIG, J; WITT, H.-J; MISIUK, J. B et al.Crystal research and technology (1979). 1988, Vol 23, Num 10-11, pp 1417-1424, issn 0232-1300Article

New and accurate technique for determination of orientation of the straight edges of single-crystal wafersLAL, K; GOSWAMI, S. N. N.Review of scientific instruments. 1988, Vol 59, Num 8, pp 1409-1411, issn 0034-6748, part 1Article

The simulation of modulated I₃ fringes in an X-ray section topograph of a stacking faultJIANG, S. S; QIU, Y; GREEN, G. S et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 323-330, issn 0031-8965Article

Detectors for synchrotron x-ray topographyKOCH, A; MOY, J. P; MORSE, J et al.Journal of physics. D, Applied physics (Print). 1993, Vol 26, Num 4A, pp A19-A21, issn 0022-3727Article

The early days of high-resolution x-ray topographyLANG, A. R.Journal of physics. D, Applied physics (Print). 1993, Vol 26, Num 4A, pp A1-A8, issn 0022-3727Article

Visualisation X des ondes acoustiques superficiellesBZHEZINSKIJ, A. D; ZUBENKO, V. V; LAVRENOV, A. A et al.Akustičeskij žurnal. 1988, Vol 34, Num 3, pp 522-525, issn 0320-7919Article

Mise en évidence et étude des microdéfauts du silicium par topographie de RXKRYLOVA, N. O; MELING, V; SHUL'PINA, I. L et al.Fizika tverdogo tela. 1986, Vol 28, Num 2, pp 440-446, issn 0367-3294Article

Dynamic study of secondary recrystallization of 3% Si-Fe by synchrotron X-radiation topographyISHIGAMI, Y; SUGA, Y; TAKAHASHI, N et al.Journal of materials engineering. 1991, Vol 13, Num 2, pp 113-118, issn 0931-7058Article

Impurity distribution among vicinal slopes of growth spirals developing on the {111} faces of synthetic diamondsKANDA, H; AKAISHI, M; YAMAOKA, S et al.Journal of crystal growth. 1991, Vol 108, Num 1-2, pp 421-424, issn 0022-0248Article