Papers Selected from the 3RD International TFT Conference - ITC'07FORTUNATO, Guglielmo; ARAKAWA, Y; CALLEJA, E et al.Solid-state electronics. 2008, Vol 52, Num 3, issn 0038-1101, 149 p.Conference Proceedings

Current enhancement in regioregular poly(thiophene) thin film transistorsCHABINYC, Michael L; LU, Jeng-Ping; SALLEO, Alberto et al.DRC : Device research conference. 2004, pp a10-a11, isbn 0-7803-8284-6, 1VolConference Paper

Large on/off current ratio and low leakage current poly-Si TFT's with multichannel structureUNAGAMI, T; KOGURE, O.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1986-1989, issn 0018-9383Article

Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodesKWANG SEOK LEE; BLANCHET, Graciela B; FENG GAO et al.DRC : Device research conference. 2004, pp 125-126, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

High-voltage polycrystalline-silicon TFT for addressing electroluminescent devicesUNAGAMI, T; TSUJIYAMA, B.Proceedings of the society for information display. 1984, Vol 25, Num 2, pp 117-121, issn 0734-1768Article

Single-monolayer inkjetted oligothiophene organic TFTs exhibiting high performance and low leakageCHANG, Paul C; MOLESA, Steven E; MURPHY, Amanda R et al.DRC : Device research conference. 2004, pp 183-184, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

The sub-threshold characteristics of polysilicon thin-film-transistorsFORTUNATO, G; MEAKIN, D. B; MIGLIORATO, P et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp 2124-2127, issn 0021-4922, 1Article

Study of ECR hyrogen plasma treatment on poly-Si thin film transistorsTAKESHITA, T; UNAGAMI, T; KOGURE, O et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2118-L2120, issn 0021-4922, part 2Article

Polysilicon super-thin-film transistor (SFT)HAYASHI, H; NOGUCHI, T; OSHIMA, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 11, pp L819-L820, issn 0021-4922Article

Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistorKARTERI, İbrahim; KARATAS, Sükrü; YAKUPHANOGLU, Fahrettin et al.Applied surface science. 2014, Vol 318, pp 74-78, issn 0169-4332, 5 p.Conference Paper

A printable form of single crystal silicon for high performance thin film transistors on plasticMENARD, E; KHANG, D.-Y; LEE, K et al.DRC : Device research conference. 2004, pp 127-128, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Silicon thin film transistor arrays for liquid crystals displaysLAKATOS, A. I.Applied physics communications. 1982, Vol 2, Num 3, pp 115-129, issn 0277-9374Article

Synthesis, properties, and device applications of functionalized acenesANTHONY, John E; BROOKS, James S; BATON, David L et al.SPIE proceedings series. 2003, pp 124-132, isbn 0-8194-5090-1, 9 p.Conference Paper

Simulations of short-channel and overlap effects in amorphous silicon thin-film transistorsSHAW, J. G; HACK, M.Journal of applied physics. 1989, Vol 65, Num 5, pp 2124-2129, issn 0021-8979, 6 p.Article

Study on narrow-stripe polycrystalline silicon thin-films transistorsTAKESHITA, T; UNAGAMI, T; KOGURE, O et al.Japanese journal of applied physics. 1988, Vol 27, Num 10, pp 1937-1941, issn 0021-4922Article

Selenium thin film transistorOGINO, T; TAKEDA, A; MIZUSHIMA, Y et al.Japanese journal of applied physics. 1984, Vol 23, Num 5, pp 639-642, issn 0021-4922, 1Article

The interface and the field effect in thin-film transistorsINAN CHEN.Journal of applied physics. 1984, Vol 56, Num 2, pp 396-400, issn 0021-8979Article

Thin-film transistors fabricated in solid-phase-recrystallized Si films on fused silica substratesTSAUR, B.-Y; FAN, J. C. C; TURNER, G. W et al.Journal of applied physics. 1983, Vol 54, Num 2, pp 1151-1153, issn 0021-8979Article

High-voltage poly-Si TFT's with multichannel structureUNAGAMI, T.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2363-2367, issn 0018-9383Article

Low-temperature polycrystalline silicon thin-film transistors for displaysBIAY-CHENG HSEIH; HATALIS, M. K; GREVE, D. W et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1842-1845, issn 0018-9383, 1Article

Depression of the off-current by N/I buffer layer in a-Si TFTZOU, X; XU, Z; ZHOU, X et al.Journal of non-crystalline solids. 1991, Vol 137-38, pp 1245-1248, issn 0022-3093, 2Conference Paper

Instability mechanisms in amorphous silicon thin film transistors and the role of the defect poolPOWELL, M. J; BAN BERKEL, C; DEANE, S. C et al.Journal of non-crystalline solids. 1991, Vol 137-38, pp 1215-1220, issn 0022-3093, 2Conference Paper

All-organic thin-film transistors made of alpha-sexithienyl semiconducting and various polymeric insulating layersXUEZHOU PENG; HOROWITZ, G; FICHOU, D et al.Applied physics letters. 1990, Vol 57, Num 19, pp 2013-2015, issn 0003-6951Article

Effects of surface characteristics of dielectric layers on polymer thin-film transistors obtained by spray methodsPARK, Hye-Yun; JIN, Jun-Su; YIM, Sanggyu et al.PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 11, pp 3718-3724, issn 1463-9076, 7 p.Article

TCS study of N- and P-channel amorphous silicon thin-film transistorsNICKEL, N; FUHS, W; MELL, H et al.Journal of non-crystalline solids. 1991, Vol 137-38, pp 1221-1224, issn 0022-3093, 2Conference Paper