Phenomenon of zaplyvania in p+-n and n+-p-junctions and its influence on the characteristics of semiconductor devices and the elements of integral schemesGARIAINOV, S. A; GARIAINOV, A. S; PLESHKO, B. K et al.Radiotehnika i èlektronika. 1990, Vol 35, Num 1, pp 166-174, issn 0033-8494Article

Zn-diffused p-n junction in the quaternary (Al_0.48In_0.52As)_z(Ga_0.47In_0.53As)_1-zHALLALI, P. E; BLANCONNIER, P; PRASEUTH, J. P et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 11, pp 2869-2872, issn 0013-4651Article

A switching device of a PN junction structure with two layers of thin oxideCHANG, D. C. Y; CHUNG LEN LEE; TAN FU LEI et al.Japanese journal of applied physics. 1989, Vol 28, Num 6, pp 972-974, issn 0021-4922, 3 p., 1Article

Depletion approximation analysis of an exponentially graded semiconductor p-n junctionPIMBLEY, J. M.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1957-1962, issn 0018-9383, 1Article

Formation of low reverse current ion-implanted n⁺p junctions by low-temperature annealingISHIHARA, Y; OKITA, A; YOSHIKAWA, K et al.Applied physics letters. 1989, Vol 55, Num 10, pp 966-968, issn 0003-6951, 3 p.Article

Hydrogen immobilization in silicon p-n junctionsJOHNSON, N. M; HERRING, C.Physical review. B, Condensed matter. 1988, Vol 38, Num 2, pp 1581-1584, issn 0163-1829Article

Damage to shallow n⁺Ip and p⁺In junctions by CHF₃+CO₂ reactive ion etchingWU, I.-W; STREET, R. A; MIKKELSEN, J. C. JR et al.Journal of applied physics. 1988, Vol 63, Num 5, pp 1628-1635, issn 0021-8979Article

Thermostimulated p-n junctionsKAMILOV, I. K; LADZHIALIEV, M. M.JETP letters. 1990, Vol 52, Num 12, pp 679-681, issn 0021-3640Article

SEM direct observation of the degradation in Ga(Al)As grin-SCH lasers grown on a silicon substrateMARTINS, R. B; HENOC, P; AKAMATSU, B et al.Electronics Letters. 1990, Vol 26, Num 7, pp 448-450, issn 0013-5194Article

Electrical properties of preamorphized and rapid thermal annealed shallow p⁺n junctionsMIYAKE, M; AOYAMA, S; HIROTA, S et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 11, pp 2872-2876, issn 0013-4651Article

Low-temperature p-n junction space-charge-region thickness including the effects of doping-dependent dielectric permittivityLIOU, J. J; LINDHOLM, F. A.Journal of applied physics. 1988, Vol 64, Num 11, pp 6369-6372, issn 0021-8979Article

Electron transit time through depletion layer of GaInAs pn junctionSMILJANIC, M; DJURIC, Z; LAZIC, Z et al.Electronics Letters. 1989, Vol 25, Num 2, pp 150-152, issn 0013-5194, 3 p.Article

Generation-recombination phenomena in almost ideal silicon p-n junctionsCEROFOLINI, G. F; POLIGNANO, M. L.Journal of applied physics. 1988, Vol 64, Num 11, pp 6349-6356, issn 0021-8979Article

Photodiode dans le violet en SiC-4HDMITRIEV, V. A; KOGAN, L. M; MOROZENKO, YA. V et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 1, pp 39-43, issn 0015-3222Article

Dopage photoassisté par laser excimère du silicium placé sous atmosphère de gaz dopantFoulon, François; Fogarassy, Eric.1989, 257 p.Thesis

Study of avalanche multiplication in planar-terminated junctionsAKHTAR, J; AHMAD, S.Solid-state electronics. 1990, Vol 33, Num 11, pp 1459-1466, issn 0038-1101, 8 p.Article

The role of dopant and segregation annealing in silicon p-n junction getteringCEROFOLINI, G. F; POLIGNANO, M. L; BENDER, H et al.Physica status solidi. A. Applied research. 1987, Vol 103, Num 2, pp 643-654, issn 0031-8965Article

Simulation of p-n junction properties of nanowires and nanowire arraysJUN HU; YANG LIU; MASLOV, Alex et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64681E.1-64681E.7, issn 0277-786X, isbn 978-0-8194-6581-8, 1VolConference Paper

Comments on Simplified modelling of delays in the emitter-base junctionVAN DEN BIESEN, J. J. H.Solid-state electronics. 1989, Vol 32, Num 10, issn 0038-1101, 922Article

Probe method for studying noise in diode structures and its implementation in GaP:N light-emitting diodesLISYANSKII, M. I.Physica status solidi. A. Applied research. 1991, Vol 123, Num 1, pp 333-340, issn 0031-8965Article

Capacitance of p-n junctions under electrical breakdownNATARAJAN, K; RAMKUMAR, K; SATYAM, M et al.Physica status solidi. A. Applied research. 1989, Vol 111, Num 2, pp K269-K272, issn 0031-8965Article

Noise of junction devicesPELLEGRINI, B.Physical review. B, Condensed matter. 1988, Vol 38, Num 12, pp 8279-8292, issn 0163-1829Article

Capacitance of semiconductor p-n junction space-charge layers: an overviewLIOU, J. J; LINDHOLM, F. A.Proceedings of the IEEE. 1988, Vol 76, Num 11, pp 1406-1422, issn 0018-9219Article

Susceptibilité électrique transverse d'une jonction p n = Electric susceptibility of p-n transverse jonctionROUISSI, Nour-Eddine.1985, 42 f.-[16] f. de plThesis

Influence of contact treatments on the electrical characteristics of shallow-junction titanium-based contactsLIAUH, H. R; TSENG, M. F; CHEN, M. C et al.Solid-state electronics. 1992, Vol 35, Num 6, pp 779-783, issn 0038-1101Article