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Resistive Switching in CeO_x Films for Nonvolatile Memory ApplicationXIAO SUN; BING SUN; LIFENG LIU et al.IEEE electron device letters. 2009, Vol 30, Num 4, pp 334-336, issn 0741-3106, 3 p.Article

Resistive switching in a Pt/TiO₂/Pt thin film stack - : a candidate for a non-volatile ReRAMSCHROEDER, Herbert; DOO SEOK JEONG.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 1982-1985, issn 0167-9317, 4 p.Conference Paper

Self-Rectifying Resistive-Switching Device With a-Si/WO₃ BilayerHANGBING LV; YINGTAO LI; QI LIU et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 229-231, issn 0741-3106, 3 p.Article

A Self-Rectifying AlO_y Bipolar RRAM With Sub-50-μA Set/Reset Current for Cross-Bar ArchitectureTRAN, X. A; ZHU, W; LIU, W. J et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1402-1404, issn 0741-3106, 3 p.Article

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A High-Yield HfO_x-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar IntegrationTRAN, X. A; YU, H. Y; NGUYEN, B. Y et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 396-398, issn 0741-3106, 3 p.Article

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Co-Occurrence of Threshold Switching and Memory Switching in Pt/NbO_x/Pt Cells for Crosspoint Memory ApplicationsXINJUN LIU; SADAF, Sharif Md; SON, Myungwoo et al.IEEE electron device letters. 2012, Vol 33, Num 2, pp 236-238, issn 0741-3106, 3 p.Article

Formation and Characterization of Filamentary Current Paths in HfO₂-Based Resistive Switching StructuresPALUMBO, F; MIRANDA, E; GHIBAUDO, G et al.IEEE electron device letters. 2012, Vol 33, Num 7, pp 1057-1059, issn 0741-3106, 3 p.Article

The Role of CuAlO Interface Layer for Switching Behavior of Al/Cu_xO/Cu Memory DeviceHANGBING LV; TINGAO TANG.IEEE electron device letters. 2010, Vol 31, Num 12, pp 1464-1466, issn 0741-3106, 3 p.Article

Resistive Switching Characteristics of Tm₂O₃, Yb₂O₃, and Lu₂O₃-Based Metal―Insulator―Metal Memory DevicesPAN, Tung-Ming; LU, Chih-Hung; MONDAL, Somnath et al.IEEE transactions on nanotechnology. 2012, Vol 11, Num 5, pp 1040-1046, issn 1536-125X, 7 p.Article

Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM DevicesKIM, Hee-Dong; AN, Ho-Myoung; EUI BOK LEE et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 10, pp 3566-3573, issn 0018-9383, 8 p.Article

Resistive Switching in HfO₂ Probed by a Metal-Insulator-Semiconductor Bipolar TransistorYALON, E; GAVRILOV, A; COHEN, S et al.IEEE electron device letters. 2012, Vol 33, Num 1, pp 11-13, issn 0741-3106, 3 p.Article

Switching Behavior in Rare-Earth Films Fabricated in Full Room TemperaturePAN, Tung-Ming; LU, Chih-Hung.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 956-961, issn 0018-9383, 6 p.Article

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal OxideLEE, Jung-Kyu; JUNG, Sunghun; CHOE, Byeong-In et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 244-246, issn 0741-3106, 3 p.Article

Self-Selection Unipolar HfO_x-Based RRAMTRAN, X. A; ZHU, W; LIU, W. J et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 391-395, issn 0018-9383, 5 p.Article

Cu-Embedded AlN-Based Nonpolar Nonvolatile Resistive Switching MemoryCHAO CHEN; SHUANG GAO; GUANGSHENG TANG et al.IEEE electron device letters. 2012, Vol 33, Num 12, pp 1711-1713, issn 0741-3106, 3 p.Article

Novel Two-Bit-per-Cell Resistive-Switching Memory for Low-Cost Embedded ApplicationsWU, Shih-Chieh; LO, Chieh; HOU, Tuo-Hung et al.IEEE electron device letters. 2011, Vol 32, Num 12, pp 1662-1664, issn 0741-3106, 3 p.Article

Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector―One Resistor Crossbar ArrayLO, Chun-Li; HOU, Tuo-Hung; CHEN, Mei-Chin et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 420-426, issn 0018-9383, 7 p.Article

Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO₃-Based Memory FilmsLIN, Meng-Han; WU, Ming-Chi; LIN, Chen-Hsi et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 8, pp 1801-1808, issn 0018-9383, 8 p.Article

High ON/OFF Ratio and Quantized Conductance in Resistive Switching of TiO₂ on SiliconCHENGQING HU; MCDANIEL, Martin D; EKERDT, John G et al.IEEE electron device letters. 2013, Vol 34, Num 11, pp 1385-1387, issn 0741-3106, 3 p.Article