Third international conference on low dimensional structures and devices, September 15-17, 1999, Antalya, TurkeyHENINI, Mohamed.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, issn 0921-5107, 315 p.Conference Proceedings

Characterization of quantum well structures using surface photovoltage spectroscopyASHKENASY, N; LEIBOVITCH, M; ROSENWAKS, Y et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 125-132, issn 0921-5107Conference Paper

Preparation of carbon nanofibers by hot filament-assisted sputteringMATSUMOTO, Y; MYO THAN OO; NAKAO, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 218-221, issn 0921-5107Conference Paper

Effects of low dimensions on junction parameters of MOS devicesDE LA BARDONNIE, M; TOUFIK, N; EL-TAHCHI, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 286-288, issn 0921-5107Conference Paper

Metallic microstructures by electroplating on polymers : an alternative to LIGA techniqueGRIGORE, L.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 299-303, issn 0921-5107Conference Paper

Silicon quantum point contact with aluminum gatePRUNNILA, M; ERÄNEN, S; GUSTAFSSON, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 193-196, issn 0921-5107Conference Paper

VCSEL structure hot electron light emitterBALKAN, N; SERPENGÜZEL, A; O'BRIEN-DAVIES, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 96-100, issn 0921-5107Conference Paper

3D island nucleation behaviour on high index substratesSANGUINETTI, S; CHIANTONI, G; GRILLI, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 239-241, issn 0921-5107Conference Paper

Field emission from amorphous diamond coated silicon tipsHUQ, S. E; PREWETT, P. D; SHE, J. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 184-187, issn 0921-5107Conference Paper

Solving problems of low dimensional devices at the system levelVOSS, B; GLESNER, M.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 276-281, issn 0921-5107Conference Paper

Potential for low dimensional structures in photovoltaicsGREEN, M. A.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 118-124, issn 0921-5107Conference Paper

Coupled cavity DQW semiconductor lasersSERPENGÜZEL, A; SAGOL, B. E; AVRUTIN, E. A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 80-83, issn 0921-5107Conference Paper

Optoelectronics-VLSI system integration Technological challengesDESMULLIEZ, M. P. Y.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 269-275, issn 0921-5107Conference Paper

Chemisorption of azafullerene on silicon : isolating C₅₉N monomersBUTCHER, M. J; JONES, F. H; CROTTI, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 202-205, issn 0921-5107Conference Paper

Aharonov-Bohm effect in GaAs/GaAlAs ring interferometersPEDERSEN, S; HANSEN, A. E; KRISTENSEN, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 234-238, issn 0921-5107Conference Paper

Fabrication of a silicon based electroluminescent deviceMALININ, A; OVCHINNIKOV, V; NOVIKOV, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 32-35, issn 0921-5107Conference Paper

Photocurrent spectroscopy of QW GRIN laser structuresHERRMANN, K. H; AL-OTAIBI, H; TOMM, J. W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 61-65, issn 0921-5107Conference Paper

Strained V-groove quantum wires in multidimensional microcavitiesCONSTANTIN, C; MARTINET, E; LEIFER, K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 158-164, issn 0921-5107Conference Paper

Formation and photoluminescence of Ge and Si nanoparticles encapsulated in oxide layersOKU, T; NAKAYAMA, T; KUNO, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 242-247, issn 0921-5107Conference Paper

Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applicationsRAZEGHI, M; SANDVIK, P; KUNG, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 107-112, issn 0921-5107Conference Paper

Dynamic latch-up in advanced LIGBT structures at high operating temperaturesVELLVEHI, M; JORDA, X; FLORES, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 304-308, issn 0921-5107Conference Paper

Resonant cavity light-emitting diodes at 660 and 880 nmVILOKKINEN, V; SIPILÄ, P; MELANEN, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 165-167, issn 0921-5107Conference Paper

Synthesis, atomic structures and properties of carbon and boron nitride fullerene materialsOKU, T; HIRANO, T; KUNO, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 206-217, issn 0921-5107Conference Paper

High-rate electron cyclotron resonance etching of GaAs via holesCHEN, Y. W; OOI, B. S; NG, G. I et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 282-285, issn 0921-5107Conference Paper

Dynamics of SiO₂/SiO_x/Si multilayer growth and interfacial effects on silicon quantum well confinement propertiesDA SILVA, E. F; DE VASCONCELOS, E. A; STOSIC, B. D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 188-192, issn 0921-5107Conference Paper