ti.\*:("Vacuum electron and ion technologies : \[selected papers\], 21-26 September 1989, Varna, Bulgaria")
Results 1 to 25 of 36
Selection :
Computer simulation of hillock growthMUÊLLER-PFEIFFER, S; ANKLAM, H.-J.Vacuum. 1990, Vol 42, Num 1-2, pp 113-116, issn 0042-207X, 4 p.Conference Paper
Focused ion beam technologyGAMO, K.Vacuum. 1990, Vol 42, Num 1-2, pp 89-93, issn 0042-207XConference Paper
Boron nitride film formation by means of dynamic mixing methodFUJIMOTO, F.Vacuum. 1990, Vol 42, Num 1-2, pp 67-72, issn 0042-207X, 6 p.Conference Paper
Calculation of the depth profiles associated with high energy ion implantationBURENKOV, A. F; KOMAROV, F. F.Vacuum. 1990, Vol 42, Num 1-2, pp 13-15, issn 0042-207X, 3 p.Conference Paper
Investigation of arsenic-implanted silicon by optical reflectometrySTAVROV, V. I; VARBANOV, R; VASILIEV, O et al.Vacuum. 1990, Vol 42, Num 1-2, pp 107-109, issn 0042-207X, 3 p.Conference Paper
Dry patterning through masks of organic materialsTOCHITSKY, E. I; OBUKHOV, E. I; SHARENDO, A. I et al.Vacuum. 1990, Vol 42, Num 1-2, pp 117-120, issn 0042-207XConference Paper
Aperture effect in plasma etching of deep silicon trenchesABACHEV, M. K; BARYSHEV, Y. P; LUKICHEV, V. F et al.Vacuum. 1990, Vol 42, Num 1-2, pp 129-131, issn 0042-207X, 3 p.Conference Paper
Quantitative Auger electron spectroscopic analysis of titanium nitridesVIGNES, J. L; LANGERON, J. P; GRIGOROV, G. I et al.Vacuum. 1990, Vol 42, Num 1-2, pp 151-153, issn 0042-207X, 3 p.Conference Paper
Self-annealing in ion-implanted Si and GaAsKOMAROV, F. F.Vacuum. 1990, Vol 42, Num 1-2, pp 101-106, issn 0042-207X, 6 p.Conference Paper
Structure and emission characteristics of AuSi alloy field ion sourceDRANDAROV, N; NIKOLOV, B; VALCHOVSKA, T et al.Vacuum. 1990, Vol 42, Num 1-2, pp 95-99, issn 0042-207XConference Paper
Atomic layer epitaxy : 12 years laterHERMAN, M. A.Vacuum. 1990, Vol 42, Num 1-2, pp 61-66, issn 0042-207X, 6 p.Conference Paper
Auger electron spectroscopic analysis of InxGa1-xAsSPASSOV, G. S.Vacuum. 1990, Vol 42, Num 1-2, pp 155-158, issn 0042-207X, 4 p.Conference Paper
Low voltage magnetron discharges for thin film preparationSTEENBECK, K; STEINBEISS, E; WINKLER, S et al.Vacuum. 1990, Vol 42, Num 1-2, pp 39-41, issn 0042-207X, 3 p.Conference Paper
Maskless etching of ion modified chromium filmsSPANGENBERG, B; POPOVA, K; SPASOVA, E et al.Vacuum. 1990, Vol 42, Num 1-2, pp 125-127, issn 0042-207X, 3 p.Conference Paper
Pulsed ion beams for modification of metal surface propertiesFOMINSKII, V. Y; MARKEEV, A. M; NEVOLIN, V. N et al.Vacuum. 1990, Vol 42, Num 1-2, pp 73-74, issn 0042-207X, 2 p.Conference Paper
The sputter deposition process : a Monte-Carlo studyHEBERLEIN, T; KRAUTHEIM, G; WUTTKE, W et al.Vacuum. 1990, Vol 42, Num 1-2, pp 47-51, issn 0042-207X, 5 p.Conference Paper
Dependence of collisional mixing on recoil energyHAUTALA, M; KOPONEN, I.Vacuum. 1990, Vol 42, Num 1-2, pp 3-7, issn 0042-207X, 5 p.Conference Paper
Problems of scanning Auger electron microscopyFRANK, L.Vacuum. 1990, Vol 42, Num 1-2, pp 147-150, issn 0042-207XConference Paper
A comprehensive SIMS study of high-Tc superconductorsCHENAKIN, S. P.Vacuum. 1990, Vol 42, Num 1-2, pp 139-142, issn 0042-207X, 4 p.Conference Paper
A low working pressure magnetron sputtering sourceKOSTADINOV, L; DOBREV, D.Vacuum. 1990, Vol 42, Num 1-2, pp 35-37, issn 0042-207XConference Paper
Power dissipation in rf glow dischargesDELTCHEV, R; ALBERT, M; SUCHANECK, G et al.Vacuum. 1990, Vol 42, Num 1-2, pp 33-34, issn 0042-207XConference Paper
Sources of high power ion beams for technological applicationsISAKOV, I. F; KOLODII, V. N; OPEKUNOV, M. S et al.Vacuum. 1990, Vol 42, Num 1-2, pp 159-162, issn 0042-207XConference Paper
Effect of low-energy ion flows on the physico-mechanical properties and morphology of iron surfacesCHEKANOV, A. L; ROMANOV, I. G; PEREVEZENTSEV, V. N et al.Vacuum. 1990, Vol 42, Num 1-2, pp 85-87, issn 0042-207X, 3 p.Conference Paper
Range profile calculations by direct numerical solution of linearized Boltzmann transport equationsPOSSELT, M.Vacuum. 1990, Vol 42, Num 1-2, pp 9-12, issn 0042-207X, 4 p.Conference Paper
Incident ion energy spectrum and target sputtering rate in dc planar magnetronCZEKAJ, D; GORANCHEV, B; HOLLMANN, E. K et al.Vacuum. 1990, Vol 42, Num 1-2, pp 43-45, issn 0042-207XConference Paper