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Manufacturing benefits of disilane as a precursor for polycrystalline silicon films for the advanced CMOS gate electrode : Materials-related manufacturing issues in the nanochip eraYUANNING CHEN; HAOWEN BU; BUTLER, Stephanie Watts et al.IEEE transactions on semiconductor manufacturing. 2005, Vol 18, Num 1, pp 42-48, issn 0894-6507, 7 p.Article
