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Ultra-shallow junction formation by gas immersion laser doping (GILD) on silicon bulk and SOI substrateHERNANDEZ, M; SARNET, T; DEBARRE, D et al.Proceedings - Electrochemical Society. 2003, pp 145-151, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper
