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Examination and evaluation of La2O3 as gate dielectric for sub-100 nm CMOS and DRAM technologyCAPODIECI, V; WIEST, F; SULIMA, T et al.Microelectronics and reliability. 2005, Vol 45, Num 5-6, pp 937-940, issn 0026-2714, 4 p.Conference Paper
