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Band-edge metal gate materials for atomic-layer-deposited HfO2 for future CMOS technologyHASAN, Musarrat; PARK, Hokyung; LEE, Joon-Myong et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2205-2208, issn 0167-9317, 4 p.Conference Paper
