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CMOS inverter based on gate-all-around Silicon-Nanowire MOSFETs fabricated using Top-Down approachRUSTAGI, S. C; SINGH, N; FANG, W. W et al.IEEE electron device letters. 2007, Vol 28, Num 11, pp 1021-1024, issn 0741-3106, 4 p.Article
