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Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AIN Buffer LayersDAI, J. N; WU, Z. H; CHEN, C. Q et al.Journal of electronic materials. 2009, Vol 38, Num 9, pp 1938-1943, issn 0361-5235, 6 p.Article
