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A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operationLIME, F; RITZENTHALER, R; RICOMA, M et al.Solid-state electronics. 2011, Vol 57, Num 1, pp 61-66, issn 0038-1101, 6 p.Article