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A 6.75 mW + 12.45 dBm IIP3 1.76 dB NF 0.9 GHz CMOS LNA Employing Multiple Gated Transistors With Bulk-Bias ControlTAE HWAN JIN; TAE WOOK KIM.IEEE microwave and wireless components letters. 2011, Vol 21, Num 11, pp 616-618, issn 1531-1309, 3 p.Article
