27349578
Results 1 to 1 of 1
Selection :
Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer : Fundamentals and Applications of Advanced Semiconductor DevicesHASHIMOTO, Kuniaki; OHTA, Akio; MURAKAMI, Hideki et al.IEICE transactions on electronics. 2013, Vol 96, Num 5, pp 674-679, issn 0916-8524, 6 p.Article