5019038
Results 1 to 1 of 1
Selection :
Epitaxial silicon deposition at 300°C with remote plasma processing using SiH4/H2 mixturesHATTANGADY, S. V; POSTHILL, J. B; FOUNTAIN, G. G et al.Applied physics letters. 1991, Vol 59, Num 3, pp 339-341, issn 0003-6951Article