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• 001 Exact sciences and technology.
  • 001B Physics
    • 001B60 Condensed matter: structure, mechanical and thermal properties. (See also 002A03G, 001D10, 001D09, 001D08B, 001B80A40, 001B30F40)
      • 001B60A Structure of solids and liquids; crystallography. (See also 001B80A30, 001B60H, 001B60D)
        • 001B60A72 Defects and impurities in crystals; microstructure. (See also 001B60H35D, 001B60H, 001B60A80)
          • 001B60A72B Theories and models of crystal defects.
          • 001B60A72C Kinetics of defect formation and annealing.
          • 001B60A72D Experimental determination of defects by diffraction and scattering.
          • 001B60A72F Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.).
          • 001B60A72H Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.).
          • 001B60A72J Point defects (vacancies, interstitials, color centers, etc.) and defect clusters.
          • 001B60A72L Linear defects: dislocations, disclinations.
          • 001B60A72M Grain and twin boundaries.
          • 001B60A72N Stacking faults and other planar or extended defects.
          • 001B60A72Q Microscopic defects (voids, inclusions, etc.).
          • 001B60A72S Impurities: concentration, distribution, and gradients. (See also 001B60F)
          • 001B60A72T Doping and impurity implantation in germanium and silicon.
          • 001B60A72V Doping and impurity implantation in III-V and II-VI semiconductors.
          • 001B60A72W Doping and impurity implantation in other materials.
          • 001B60A72Y Interaction between different crystal defects; gettering effect.

Title

• fr : Défauts et impuretés dans les cristaux; microstructure.
• en : Defects and impurities in crystals; microstructure.

SKOS Notation

001B60A72

In the plan

Pascal Classification Scheme