Crystalline quality of ZnSe thin films grown on GaAs by pulsed laser deposition in He and Ar ambients
- Author
- GANGULI, Tapas1 ; VEDVYAS, M2 ; BHATTACHARYA, P1 ; KUKREJA, L. M1 ; INGALE, Alka1 ; ADHI, K. P2 ; CHANDRASHEKHARAN, K. S3 ; ARORA, B. M3 ; RUSTAGI, K. C1
[1] Laser Physics Division, Centre for Advanced Technology, Indore 452013, India
[2] Department of Physics, University of Pune, Pune, India
[3] Solid State Electronics Laboratory, Tata Institute for Fundamental Research, Mumbai 400005, India - Source
Thin solid films. 2001, Vol 388, Num 1-2, pp 189-194 ; ref : 14 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Keyword (fr)
- Accommodation réseau Atmosphère contrôlée Caractérisation Couche mince Croissance cristalline en phase vapeur Densité dislocation Epitaxie Etude expérimentale Hétérojonction Laser pulsé Méthode ablation laser Perfection cristalline Semiconducteur II-VI Zinc séléniure Se Zn Substrat GaAs ZnSe Composé minéral Métal transition composé
- Keyword (en)
- Mismatch lattice Controlled atmospheres Characterization Thin films Crystal growth from vapors Dislocation density Epitaxy Experimental study Heterojunctions Pulsed lasers Laser ablation technique Crystal perfection II-VI semiconductors Zinc selenides Inorganic compounds Transition element compounds
- Keyword (es)
- Acomodación red Caracterización Perfección cristalina
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15F Laser deposition
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1038080
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0040-6090(01)00817-3 
https://dx.doi.org/10.1016/S0040-6090(01)00817-3
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