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STM observation of the 2 x 3 and c(2 x 6) structures on Ba/Si(100)

Author
OJIMA, Kaoru1 ; YOSHIMURA, Masamichi1 ; UEDA, Kazuyuki1
[1] Graduate School of Engineering, Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Source

Surface science. 2001, Vol 491, Num 1-2, pp 169-174 ; ref : 22 ref

CODEN
SUSCAS
ISSN
0039-6028
Scientific domain
General chemistry, physical chemistry; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics; Polymers, paint and wood industries
Publisher
Elsevier Science, Amsterdam / Elsevier Science, Lausanne / Elsevier Science, New York, NY
Publication country
Netherlands
Document type
Article
Language
English
Keyword (fr)
Baryum Etude expérimentale Matériau semiconducteur Modèle structure STM Silicium Structure adsorption Structure surface Surstructure Ba Si
Keyword (en)
Barium Experimental study Semiconductor materials Structural models STM Silicon Adsorption structure Surface structure Superstructure
Keyword (es)
Estructura adsorción Superestructura
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography

Pacs
6835B Surface structure and topography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1109800

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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