M-plane GaN(1100) grown on γ-LiAlO2(100): nitride semiconductors free of internal electrostatic fields
- Author
- WALTEREIT, P1 ; BRANDT, O1 ; RAMSTEINER, M1 ; TRAMPERT, A1 ; GRAHN, H. T1 ; MENNIGER, J1 ; REICHE, M1 ; PLOOG, K. H1
[1] Paud-Drude-Institute für Festkörperelektronik, Hausrogteiplatz 5 7., 10117 Berlin, Germany - Conference title
- Molecular Beam Epitaxy 2000. Proceedings of the Eleventh International Conference on Molecular Beam Epitaxy, Beijing, China, 11-15 September 2000
- Conference name
- MBE-XI Molecular Beam Epitaxy. International Conference (11 ; Beijing 2000-09-11)
- Author (monograph)
- KONG, Mei Ying (Editor)1 ; TU, Charles W (Editor)2
[1] Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China
[2] Department of Electrical and Computer Engineering, University of California, San Diego, CA, United States - Source
Journal of crystal growth. 2001, Vol 227-28, pp 437-441 ; ref : 16 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium nitrure Couche mince Couche tampon Croissance cristalline en phase vapeur Epitaxie jet moléculaire Etude expérimentale Gallium nitrure Multicouche Orientation cristalline Photoluminescence Puits quantique Relation orientation Semiconducteur III-V Source plasma Structure wurtzite Structure électronique Substrat Al Ga N AlGaN Ga N GaN Substrat LiAlO2 Composé minéral Propriété optique Propriété électronique
- Keyword (en)
- Aluminium nitrides Thin films Buffer layer Crystal growth from vapors Molecular beam epitaxy Experimental study Gallium nitrides Multilayers Crystal orientation Photoluminescence Quantum wells Orientation relation III-V semiconductors Plasma sources Wurtzite structure Electronic structure Substrates Inorganic compounds Optical properties Electronic properties
- Keyword (es)
- Capa tampón Relación orientación Estructura wurtzita Propiedad electrónica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1131728
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(01)00739-4 
https://dx.doi.org/10.1016/S0022-0248(01)00739-4
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