Electron-stimulated oxidation of silicon carbide
- Author
- MCDANIEL, G. Y1 ; FENSTERMAKER, S. T1 ; WALKER, D. E1 ; LAMPERT, W. V1 ; MUKHOPADHYAY, S. M2 ; HOLLOWAY, P. H3
[1] Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson AFB, OH 45433-7707, United States
[2] Mechanical and Materials Engineering, Wright State University, Dayton, OH 45435-0001, United States
[3] Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400, United States - Source
Surface science. 2000, Vol 445, Num 2-3, pp 159-166 ; ref : 19 ref
- Publisher
- Elsevier Science, Amsterdam
/
Elsevier Science, Lausanne
/
Elsevier Science, New York, NY
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Etude expérimentale Faisceau électronique Oxydation Réaction surface Silicium carbure Spectrométrie Auger C Si SiC Composé minéral
- Keyword (en)
- Experimental study Electron beam Oxidation Surface reaction Silicon carbide Auger electron spectrometry Inorganic compound
- Keyword (es)
- Estudio experimental Haz electrónico Oxidación Reacción superficie Silicio carburo Espectrometría Auger Compuesto inorgánico
- Classification
- Pascal
- 001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01F Physical chemistry of induced reactions (with radiations, particles and ultrasonics) / 001C01F03 Solvated and trapped electrons
- Discipline
- General chemistry and physical chemistry
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1241895
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0039-6028(99)01028-6 
https://dx.doi.org/10.1016/S0039-6028(99)01028-6
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