CBE and MOCVD growth of GaInNAs
- Author
- MIYAMOTO, T1 ; KAGEYAMA, T2 ; MAKINO, S2 ; SCHLENKER, D2 ; KOYAMA, F2 ; IGA, K2
[1] Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
[2] Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan - Conference title
- Chemical Beam Epitaxy and Related Growth Techniques 1999: Proceedings of the Seventh International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Tsukuba, Japan, July 28-30, 1999
- Conference name
- ICCBE International Conference on Chemical Beam Epitaxy and Related Growth Techniques (7 ; Tsukuba 1999-07-28)
- Author (monograph)
- SUGIURA, H (Editor)1 ; KONAGAI, M (Editor)2 ; ASAHI, H (Editor)3
[1] NTT Photonics Laboratories, Japan
[2] Tokyo Institute of Technology, Japan
[3] Osaka University, Japan - Source
Journal of crystal growth. 2000, Vol 209, Num 2-3, pp 339-344 ; ref : 18 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Azote Composé quaternaire Contamination Croissance cristalline en phase vapeur Décomposition thermique Dépôt chimique phase vapeur Epitaxie jet chimique Etude comparative Etude expérimentale Gallium arséniure Gallium nitrure Hydrazine organique Indium arséniure Indium nitrure Multicouche Méthode MOCVD Photoluminescence Précurseur Puits quantique Radical libre minéral Semiconducteur III-V As Ga In N GaInNAs Hydrazine(diméthyl) Composé minéral
- Keyword (en)
- Nitrogen Quaternary compounds Contamination Crystal growth from vapors Thermal decomposition CVD Chemical beam epitaxy Comparative study Experimental study Gallium arsenides Gallium nitrides Organic hydrazine Indium arsenides Indium nitrides Multilayers MOCVD Photoluminescence Precursor Quantum wells Inorganic free radical III-V semiconductors Inorganic compounds
- Keyword (es)
- Descomposición térmica Estudio comparativo Hidracina orgánica Radical libre inorgánico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1288662
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/S0022-0248(99)00567-9 
https://dx.doi.org/10.1016/S0022-0248(99)00567-9
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(99)00567-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:31:\"CBE and MOCVD growth of GaInNAs\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2000\";s:9:\"\u0000*\u0000volume\";s:3:\"209\";s:8:\"\u0000*\u0000issue\";s:3:\"2-3\";s:8:\"\u0000*\u0000spage\";s:3:\"339\";s:8:\"\u0000*\u0000epage\";s:3:\"344\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"MIYAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"KAGEYAMA, T\";i:1;s:9:\"MAKINO, S\";i:2;s:12:\"SCHLENKER, D\";i:3;s:9:\"KOYAMA, F\";i:4;s:6:\"IGA, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:198:\"Chemical Beam Epitaxy and Related Growth Techniques 1999: Proceedings of the Seventh International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Tsukuba, Japan, July 28-30, 1999\";s:8:\"\u0000*\u0000title\";s:31:\"CBE and MOCVD growth of GaInNAs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(99)00567-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:31:\"CBE and MOCVD growth of GaInNAs\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2000\";s:9:\"\u0000*\u0000volume\";s:3:\"209\";s:8:\"\u0000*\u0000issue\";s:3:\"2-3\";s:8:\"\u0000*\u0000spage\";s:3:\"339\";s:8:\"\u0000*\u0000epage\";s:3:\"344\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"MIYAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"KAGEYAMA, T\";i:1;s:9:\"MAKINO, S\";i:2;s:12:\"SCHLENKER, D\";i:3;s:9:\"KOYAMA, F\";i:4;s:6:\"IGA, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:198:\"Chemical Beam Epitaxy and Related Growth Techniques 1999: Proceedings of the Seventh International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Tsukuba, Japan, July 28-30, 1999\";s:8:\"\u0000*\u0000title\";s:31:\"CBE and MOCVD growth of GaInNAs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(99)00567-9\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(99)00567-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:31:\"CBE and MOCVD growth of GaInNAs\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2000\";s:9:\"\u0000*\u0000volume\";s:3:\"209\";s:8:\"\u0000*\u0000issue\";s:3:\"2-3\";s:8:\"\u0000*\u0000spage\";s:3:\"339\";s:8:\"\u0000*\u0000epage\";s:3:\"344\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"MIYAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"KAGEYAMA, T\";i:1;s:9:\"MAKINO, S\";i:2;s:12:\"SCHLENKER, D\";i:3;s:9:\"KOYAMA, F\";i:4;s:6:\"IGA, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:198:\"Chemical Beam Epitaxy and Related Growth Techniques 1999: Proceedings of the Seventh International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Tsukuba, Japan, July 28-30, 1999\";s:8:\"\u0000*\u0000title\";s:31:\"CBE and MOCVD growth of GaInNAs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(99)00567-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:31:\"CBE and MOCVD growth of GaInNAs\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2000\";s:9:\"\u0000*\u0000volume\";s:3:\"209\";s:8:\"\u0000*\u0000issue\";s:3:\"2-3\";s:8:\"\u0000*\u0000spage\";s:3:\"339\";s:8:\"\u0000*\u0000epage\";s:3:\"344\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"MIYAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"KAGEYAMA, T\";i:1;s:9:\"MAKINO, S\";i:2;s:12:\"SCHLENKER, D\";i:3;s:9:\"KOYAMA, F\";i:4;s:6:\"IGA, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:198:\"Chemical Beam Epitaxy and Related Growth Techniques 1999: Proceedings of the Seventh International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Tsukuba, Japan, July 28-30, 1999\";s:8:\"\u0000*\u0000title\";s:31:\"CBE and MOCVD growth of GaInNAs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(99)00567-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:31:\"CBE and MOCVD growth of GaInNAs\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2000\";s:9:\"\u0000*\u0000volume\";s:3:\"209\";s:8:\"\u0000*\u0000issue\";s:3:\"2-3\";s:8:\"\u0000*\u0000spage\";s:3:\"339\";s:8:\"\u0000*\u0000epage\";s:3:\"344\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"MIYAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"KAGEYAMA, T\";i:1;s:9:\"MAKINO, S\";i:2;s:12:\"SCHLENKER, D\";i:3;s:9:\"KOYAMA, F\";i:4;s:6:\"IGA, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:198:\"Chemical Beam Epitaxy and Related Growth Techniques 1999: Proceedings of the Seventh International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Tsukuba, Japan, July 28-30, 1999\";s:8:\"\u0000*\u0000title\";s:31:\"CBE and MOCVD growth of GaInNAs\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
