Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy
- Author
- KAGEYAMA, T1 ; MIYAMOTO, T2 ; MAKINO, S1 ; KOYAMA, F1 ; IGA, K1
[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
[2] Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan - Conference title
- Chemical Beam Epitaxy and Related Growth Techniques 1999: Proceedings of the Seventh International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Tsukuba, Japan, July 28-30, 1999
- Conference name
- ICCBE International Conference on Chemical Beam Epitaxy and Related Growth Techniques (7 ; Tsukuba 1999-07-28)
- Author (monograph)
- SUGIURA, H (Editor)1 ; KONAGAI, M (Editor)2 ; ASAHI, H (Editor)3
[1] NTT Photonics Laboratories, Japan
[2] Tokyo Institute of Technology, Japan
[3] Osaka University, Japan - Source
Journal of crystal growth. 2000, Vol 209, Num 2-3, pp 350-354 ; ref : 12 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Azote Contamination Couche mince Croissance cristalline en phase vapeur Epitaxie jet chimique Etude expérimentale Gallium arséniure Gallium nitrure Indium arséniure Indium nitrure Multicouche Perfection cristalline Photoluminescence Précurseur Puits quantique Relation fabrication propriété Semiconducteur III-V Source plasma As Ga In N As Ga N GaInNAs GaNAs Composé minéral
- Keyword (en)
- Nitrogen Contamination Thin films Crystal growth from vapors Chemical beam epitaxy Experimental study Gallium arsenides Gallium nitrides Indium arsenides Indium nitrides Multilayers Crystal perfection Photoluminescence Precursor Quantum wells Fabrication property relation III-V semiconductors Plasma sources Inorganic compounds
- Keyword (es)
- Perfección cristalina Relación fabricación propiedad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55C Iii-v semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pacs
- 6865 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1288663
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(99)00569-2 
https://dx.doi.org/10.1016/S0022-0248(99)00569-2
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