Control of thickness and orientation of solution-grown silicon nanowires
- Author
- HOLMES, J. D1 ; JOHNSTON, K. P1 ; DOTY, R. C1 ; KORGEL, B. A1
[1] Department of Chemical Engineering and Texas Materials Institute, University of Texas, Austin, TX 78712, United States - Source
Science (Washington, D.C.). 2000, Vol 287, Num 5457, pp 1471-1473
- CODEN
- SCIEAS
- ISSN
- 0036-8075
- Scientific domain
- Multidisciplinary
- Publisher
- American Association for the Advancement of Science, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Commande processus Confinement Croissance cristalline en solution Echelle nanométrique Effet quantique Epaisseur Etude expérimentale Fil Matériau semiconducteur Orientation cristalline Photoluminescence Silicium Si Non métal
- Keyword (en)
- Process control Confinement Crystal growth from solutions Nanometer scale Quantum effect Thickness Experimental study Wires Semiconductor materials Crystal orientation Photoluminescence Silicon Nonmetals
- Keyword (es)
- Efecto cuántico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10D Growth from solutions
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1301142
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1126/science.287.5457.1471 
https://dx.doi.org/10.1126/science.287.5457.1471
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